Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors
Abstract The fabrication and characterization of metal/BaTiO3/β‐Ga2O3 solar‐blind photodetectors are reported. β‐Ga2O3 is a promising material for solar‐blind photodetectors due to its large bandgap and the availability of low defect‐density melt‐grown substrates. In this work, structures are introd...
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| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400552 |
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| author | Nathan Wriedt Lingyu Meng Dong Su Yu Chris Chae Kyle Liddy Ashok Dheenan Sushovan Dhara Roberto C. Myers Oleg Maksimov Richard Blakeley Sanjay Krishna Jinwoo Hwang Hongping Zhao Joe McGlone Siddharth Rajan |
| author_facet | Nathan Wriedt Lingyu Meng Dong Su Yu Chris Chae Kyle Liddy Ashok Dheenan Sushovan Dhara Roberto C. Myers Oleg Maksimov Richard Blakeley Sanjay Krishna Jinwoo Hwang Hongping Zhao Joe McGlone Siddharth Rajan |
| author_sort | Nathan Wriedt |
| collection | DOAJ |
| description | Abstract The fabrication and characterization of metal/BaTiO3/β‐Ga2O3 solar‐blind photodetectors are reported. β‐Ga2O3 is a promising material for solar‐blind photodetectors due to its large bandgap and the availability of low defect‐density melt‐grown substrates. In this work, structures are introduced that employ high‐permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high‐k dielectric BaTiO3 reduces the dark current by ≈104, all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 103 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self‐trapped holes in Ga2O3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β‐Ga2O3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO3/Pt interface. |
| format | Article |
| id | doaj-art-e507cbe48f3b4875863d68842ce66222 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-e507cbe48f3b4875863d68842ce662222025-01-10T13:40:17ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202400552Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind PhotodetectorsNathan Wriedt0Lingyu Meng1Dong Su Yu2Chris Chae3Kyle Liddy4Ashok Dheenan5Sushovan Dhara6Roberto C. Myers7Oleg Maksimov8Richard Blakeley9Sanjay Krishna10Jinwoo Hwang11Hongping Zhao12Joe McGlone13Siddharth Rajan14Department of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Material Science and Engineering Fontana Laboratories 2136 The Ohio State University 140 W 19th Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USARadiation Monitoring Devices 44 Hunt Street Waterton MA 02472 USARadiation Monitoring Devices 44 Hunt Street Waterton MA 02472 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Material Science and Engineering Fontana Laboratories 2136 The Ohio State University 140 W 19th Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USADepartment of Electrical and Computer Engineering Dreese Labs 205 The Ohio State University 2015 Neil Ave Columbus OH 43210 USAAbstract The fabrication and characterization of metal/BaTiO3/β‐Ga2O3 solar‐blind photodetectors are reported. β‐Ga2O3 is a promising material for solar‐blind photodetectors due to its large bandgap and the availability of low defect‐density melt‐grown substrates. In this work, structures are introduced that employ high‐permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high‐k dielectric BaTiO3 reduces the dark current by ≈104, all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 103 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self‐trapped holes in Ga2O3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β‐Ga2O3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO3/Pt interface.https://doi.org/10.1002/aelm.202400552BaTiO3Ga2O3schottky photodetectorsUV–vis rejection ratio |
| spellingShingle | Nathan Wriedt Lingyu Meng Dong Su Yu Chris Chae Kyle Liddy Ashok Dheenan Sushovan Dhara Roberto C. Myers Oleg Maksimov Richard Blakeley Sanjay Krishna Jinwoo Hwang Hongping Zhao Joe McGlone Siddharth Rajan Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors Advanced Electronic Materials BaTiO3 Ga2O3 schottky photodetectors UV–vis rejection ratio |
| title | Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors |
| title_full | Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors |
| title_fullStr | Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors |
| title_full_unstemmed | Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors |
| title_short | Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors |
| title_sort | enhanced uv vis rejection ratio in metal batio3 β ga2o3 solar blind photodetectors |
| topic | BaTiO3 Ga2O3 schottky photodetectors UV–vis rejection ratio |
| url | https://doi.org/10.1002/aelm.202400552 |
| work_keys_str_mv | AT nathanwriedt enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT lingyumeng enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT dongsuyu enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT chrischae enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT kyleliddy enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT ashokdheenan enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT sushovandhara enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT robertocmyers enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT olegmaksimov enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT richardblakeley enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT sanjaykrishna enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT jinwoohwang enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT hongpingzhao enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT joemcglone enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors AT siddharthrajan enhanceduvvisrejectionratioinmetalbatio3bga2o3solarblindphotodetectors |