Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method
In this work, thin films of lead iodide (PbI2) were deposited on glass substrates with different thicknesses by vacuum thermal evaporation method. The structural, chemical, electrical and optical characteristics of the thin films were studied. XRD analysis showed that lead iodide film is polycrystal...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Mustansiriyah University
2019-09-01
|
| Series: | Al-Mustansiriyah Journal of Science |
| Subjects: | |
| Online Access: | http://mjs.uomustansiriyah.edu.iq/ojs1/index.php/MJS/article/view/581 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850162142491181056 |
|---|---|
| author | Mohammed S. Mohammed Ghassq Dawood Salman Khaleel I. Hassoon |
| author_facet | Mohammed S. Mohammed Ghassq Dawood Salman Khaleel I. Hassoon |
| author_sort | Mohammed S. Mohammed |
| collection | DOAJ |
| description | In this work, thin films of lead iodide (PbI2) were deposited on glass substrates with different thicknesses by vacuum thermal evaporation method. The structural, chemical, electrical and optical characteristics of the thin films were studied. XRD analysis showed that lead iodide film is polycrystalline having hexagonal structure. A particle size was estimated by Williamson - Hall technique (13) nm and strain (4.90*10-3) are founded from the intercept with y-axis and slope for PbI2. The UV-VIS measurements illustrated that the lead iodide has a direct optical band gap and Urbach energy to be 0.677 eV2. Raman peaks are detected at 70, 96, 99.5, 188 and 202 cm-1 which corresponding to characteristic of PbI2 at (E21, A11, 2E11 and A1g). The FTIR spectrum of PbI2 thin film showed six bands at 1650, 1900, 3100, 3400, 3600 and 3800 cm-1. Mechanism of dc transport was also analyzed in the temperature range 315–395 K. Also the variation of reflectivity in the range near infrared is conductive generally attributed to thin film nature, where this film contain light scattering and large surface area, which enhance the optical absorption and hence, a low reflectivity is obtained. |
| format | Article |
| id | doaj-art-e4dd4e4565244c20bf88f1e31df3a25e |
| institution | OA Journals |
| issn | 1814-635X 2521-3520 |
| language | English |
| publishDate | 2019-09-01 |
| publisher | Mustansiriyah University |
| record_format | Article |
| series | Al-Mustansiriyah Journal of Science |
| spelling | doaj-art-e4dd4e4565244c20bf88f1e31df3a25e2025-08-20T02:22:38ZengMustansiriyah UniversityAl-Mustansiriyah Journal of Science1814-635X2521-35202019-09-01302606610.23851/mjs.v30i2.581277Growth and Characterizes of PbI2 Films By Vacuum Evaporation MethodMohammed S. Mohammed0Ghassq Dawood Salman1Khaleel I. Hassoon2Department of Applied Sciences, University of Technology.Department of Applied Sciences, University of Technology.Department of Applied Sciences, University of Technology.In this work, thin films of lead iodide (PbI2) were deposited on glass substrates with different thicknesses by vacuum thermal evaporation method. The structural, chemical, electrical and optical characteristics of the thin films were studied. XRD analysis showed that lead iodide film is polycrystalline having hexagonal structure. A particle size was estimated by Williamson - Hall technique (13) nm and strain (4.90*10-3) are founded from the intercept with y-axis and slope for PbI2. The UV-VIS measurements illustrated that the lead iodide has a direct optical band gap and Urbach energy to be 0.677 eV2. Raman peaks are detected at 70, 96, 99.5, 188 and 202 cm-1 which corresponding to characteristic of PbI2 at (E21, A11, 2E11 and A1g). The FTIR spectrum of PbI2 thin film showed six bands at 1650, 1900, 3100, 3400, 3600 and 3800 cm-1. Mechanism of dc transport was also analyzed in the temperature range 315–395 K. Also the variation of reflectivity in the range near infrared is conductive generally attributed to thin film nature, where this film contain light scattering and large surface area, which enhance the optical absorption and hence, a low reflectivity is obtained.http://mjs.uomustansiriyah.edu.iq/ojs1/index.php/MJS/article/view/581Pbl2 thin films, Vacuum evaporation, direct band gap, Raman scattering, Urbach energy and Reflectivity. |
| spellingShingle | Mohammed S. Mohammed Ghassq Dawood Salman Khaleel I. Hassoon Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method Al-Mustansiriyah Journal of Science Pbl2 thin films, Vacuum evaporation, direct band gap, Raman scattering, Urbach energy and Reflectivity. |
| title | Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method |
| title_full | Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method |
| title_fullStr | Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method |
| title_full_unstemmed | Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method |
| title_short | Growth and Characterizes of PbI2 Films By Vacuum Evaporation Method |
| title_sort | growth and characterizes of pbi2 films by vacuum evaporation method |
| topic | Pbl2 thin films, Vacuum evaporation, direct band gap, Raman scattering, Urbach energy and Reflectivity. |
| url | http://mjs.uomustansiriyah.edu.iq/ojs1/index.php/MJS/article/view/581 |
| work_keys_str_mv | AT mohammedsmohammed growthandcharacterizesofpbi2filmsbyvacuumevaporationmethod AT ghassqdawoodsalman growthandcharacterizesofpbi2filmsbyvacuumevaporationmethod AT khaleelihassoon growthandcharacterizesofpbi2filmsbyvacuumevaporationmethod |