Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power (2.5×1011 Wm−2) terahertz s...
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| Format: | Article |
| Language: | English |
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Wiley
2008-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2008/275357 |
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| author | Moumita Mukherjee Nilratan Mazumder Sitesh Kumar Roy |
| author_facet | Moumita Mukherjee Nilratan Mazumder Sitesh Kumar Roy |
| author_sort | Moumita Mukherjee |
| collection | DOAJ |
| description | The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power (2.5×1011 Wm−2) terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied. It is found that (i) the negative conductance and (ii) the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings. |
| format | Article |
| id | doaj-art-e4db42d4bd8e4e8b9044d0944e46beea |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2008-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-e4db42d4bd8e4e8b9044d0944e46beea2025-08-20T02:21:18ZengWileyActive and Passive Electronic Components0882-75161563-50312008-01-01200810.1155/2008/275357275357Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency RegimeMoumita Mukherjee0Nilratan Mazumder1Sitesh Kumar Roy2Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, IndiaInternational Institute of Information Technology, Visva Bharati University, X-1, 8/3, Block-EP, Sector V, Salt Lake Electronics Complex, Kolkata 700091, IndiaCentre of Millimeterwave Semiconductor Devices and Systems, Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, IndiaThe dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power (2.5×1011 Wm−2) terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied. It is found that (i) the negative conductance and (ii) the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings.http://dx.doi.org/10.1155/2008/275357 |
| spellingShingle | Moumita Mukherjee Nilratan Mazumder Sitesh Kumar Roy Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime Active and Passive Electronic Components |
| title | Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime |
| title_full | Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime |
| title_fullStr | Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime |
| title_full_unstemmed | Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime |
| title_short | Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime |
| title_sort | prospects of 4h sic double drift region impatt device as a photo sensitive high power source at 0 7 terahertz frequency regime |
| url | http://dx.doi.org/10.1155/2008/275357 |
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