APA (7th ed.) Citation

Mukherjee, M., Mazumder, N., & Roy, S. K. Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime. Wiley.

Chicago Style (17th ed.) Citation

Mukherjee, Moumita, Nilratan Mazumder, and Sitesh Kumar Roy. Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime. Wiley.

MLA (9th ed.) Citation

Mukherjee, Moumita, et al. Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime. Wiley.