Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration
Abstract Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite f...
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55113-0 |
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| author | Yu Liu Shuzhang Yang Lina Hua Xiaomin Yang Enlong Li Jincheng Wen Yanqiu Wu Liping Zhu Yingguo Yang Yan Zhao Zhenghua An Junhao Chu Wenwu Li |
| author_facet | Yu Liu Shuzhang Yang Lina Hua Xiaomin Yang Enlong Li Jincheng Wen Yanqiu Wu Liping Zhu Yingguo Yang Yan Zhao Zhenghua An Junhao Chu Wenwu Li |
| author_sort | Yu Liu |
| collection | DOAJ |
| description | Abstract Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite film with both robust ferroelectric and semiconductor properties. Here, by doping with 2-methylbenzimidazole, Sn-based perovskite [93.3 mol% (FA0.86Cs0.14)SnI3 and 6.7 mol% PEA2SnI4] semiconductor films are transformed into ferroelectric semiconductor films, owing to molecular reconfiguration. The reconfigured ferroelectric semiconductors exhibit a high remanent polarization (P r) of 23.2 μC/cm2. The emergence of ferroelectricity can be ascribed to the hydrogen bond enhancement after imidazole molecular doping, and then the spatial symmetry breaks causing the positive and negative charge centers to become non-coincident. Remarkably, the transistors based on perovskite ferroelectric semiconductors have a low subthreshold swing of 67 mv/dec, which further substantiates the superiority of introducing ferroelectricity. This work has developed a method to realize Sn-based ferroelectric semiconductor films for electronic device applications. |
| format | Article |
| id | doaj-art-e4b68a838a3a4987937db7b9cf07df94 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
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| spelling | doaj-art-e4b68a838a3a4987937db7b9cf07df942025-01-05T12:38:32ZengNature PortfolioNature Communications2041-17232025-01-011611810.1038/s41467-024-55113-0Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfigurationYu Liu0Shuzhang Yang1Lina Hua2Xiaomin Yang3Enlong Li4Jincheng Wen5Yanqiu Wu6Liping Zhu7Yingguo Yang8Yan Zhao9Zhenghua An10Junhao Chu11Wenwu Li12State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan UniversitySchool of Microelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityState Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Institute of Optoelectronics, Fudan UniversityAbstract Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite film with both robust ferroelectric and semiconductor properties. Here, by doping with 2-methylbenzimidazole, Sn-based perovskite [93.3 mol% (FA0.86Cs0.14)SnI3 and 6.7 mol% PEA2SnI4] semiconductor films are transformed into ferroelectric semiconductor films, owing to molecular reconfiguration. The reconfigured ferroelectric semiconductors exhibit a high remanent polarization (P r) of 23.2 μC/cm2. The emergence of ferroelectricity can be ascribed to the hydrogen bond enhancement after imidazole molecular doping, and then the spatial symmetry breaks causing the positive and negative charge centers to become non-coincident. Remarkably, the transistors based on perovskite ferroelectric semiconductors have a low subthreshold swing of 67 mv/dec, which further substantiates the superiority of introducing ferroelectricity. This work has developed a method to realize Sn-based ferroelectric semiconductor films for electronic device applications.https://doi.org/10.1038/s41467-024-55113-0 |
| spellingShingle | Yu Liu Shuzhang Yang Lina Hua Xiaomin Yang Enlong Li Jincheng Wen Yanqiu Wu Liping Zhu Yingguo Yang Yan Zhao Zhenghua An Junhao Chu Wenwu Li Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration Nature Communications |
| title | Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration |
| title_full | Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration |
| title_fullStr | Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration |
| title_full_unstemmed | Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration |
| title_short | Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration |
| title_sort | emergence of ferroelectricity in sn based perovskite semiconductor films by iminazole molecular reconfiguration |
| url | https://doi.org/10.1038/s41467-024-55113-0 |
| work_keys_str_mv | AT yuliu emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT shuzhangyang emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT linahua emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT xiaominyang emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT enlongli emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT jinchengwen emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT yanqiuwu emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT lipingzhu emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT yingguoyang emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT yanzhao emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT zhenghuaan emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT junhaochu emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration AT wenwuli emergenceofferroelectricityinsnbasedperovskitesemiconductorfilmsbyiminazolemolecularreconfiguration |