Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth
Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization pro...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Journal of Materiomics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824000832 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841542406864896000 |
|---|---|
| author | Ruishan Li Mengyu Hong Wei Shangguan Yanzhe Zhang Yihe Liu He Jiang Huihui Yu Li Gao Xiankun Zhang Zheng Zhang Yue Zhang |
| author_facet | Ruishan Li Mengyu Hong Wei Shangguan Yanzhe Zhang Yihe Liu He Jiang Huihui Yu Li Gao Xiankun Zhang Zheng Zhang Yue Zhang |
| author_sort | Ruishan Li |
| collection | DOAJ |
| description | Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization process of Mo-source precursor (MSP). However, the target product 2H-MoTe2 from Mo precursor suffers from long growth time and suboptimal crystal quality, and MoOx precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products. Here, we developed magnetron-sputtered MoO3 film for fast and high-mobility 2H-MoTe2 growth. The solid-to-solid phase transition growth mechanism of 2D MoTe2 from Mo and MoOx precursor was first experimentally unified, and the effect mechanism of MSPs on 2D MoTe2 growth was systematically elucidated. Compared with Mo and MoO2, the MoO3 precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products. Meanwhile, the lowest Gibbs free energy change of the chemical reaction results in an impressive 2H-MoTe2 growth rate of 8.07 μm/min. The constructed 2H-MoTe2 field-effect transistor array from MoO3 precursor showcases record-high hole mobility of 85 cm2·V-1·s-1, competitive on-off ratio of 3×104, and outstanding uniformity. This scalable method not only offers efficiency but also aligns with industry standards, making it a promising guideline for diverse 2D material preparation towards real-world applications. |
| format | Article |
| id | doaj-art-e4aab18168194521b19815d44ed46303 |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-e4aab18168194521b19815d44ed463032025-01-14T04:12:27ZengElsevierJournal of Materiomics2352-84782025-03-01112100868Controlled lattice deformation for high-mobility two-dimensional MoTe2 growthRuishan Li0Mengyu Hong1Wei Shangguan2Yanzhe Zhang3Yihe Liu4He Jiang5Huihui Yu6Li Gao7Xiankun Zhang8Zheng Zhang9Yue Zhang10Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, ChinaAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China; Corresponding author. Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China.Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China; Corresponding author. Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China.Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China; Beijing Key Laboratory for Advanced Energy Materials and Technologies, Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China; Corresponding author. Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China.Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization process of Mo-source precursor (MSP). However, the target product 2H-MoTe2 from Mo precursor suffers from long growth time and suboptimal crystal quality, and MoOx precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products. Here, we developed magnetron-sputtered MoO3 film for fast and high-mobility 2H-MoTe2 growth. The solid-to-solid phase transition growth mechanism of 2D MoTe2 from Mo and MoOx precursor was first experimentally unified, and the effect mechanism of MSPs on 2D MoTe2 growth was systematically elucidated. Compared with Mo and MoO2, the MoO3 precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products. Meanwhile, the lowest Gibbs free energy change of the chemical reaction results in an impressive 2H-MoTe2 growth rate of 8.07 μm/min. The constructed 2H-MoTe2 field-effect transistor array from MoO3 precursor showcases record-high hole mobility of 85 cm2·V-1·s-1, competitive on-off ratio of 3×104, and outstanding uniformity. This scalable method not only offers efficiency but also aligns with industry standards, making it a promising guideline for diverse 2D material preparation towards real-world applications.http://www.sciencedirect.com/science/article/pii/S2352847824000832Two-dimensional MoTe2Chemical vapor depositionLattice deformationGibbs free energyField-effect transistor |
| spellingShingle | Ruishan Li Mengyu Hong Wei Shangguan Yanzhe Zhang Yihe Liu He Jiang Huihui Yu Li Gao Xiankun Zhang Zheng Zhang Yue Zhang Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth Journal of Materiomics Two-dimensional MoTe2 Chemical vapor deposition Lattice deformation Gibbs free energy Field-effect transistor |
| title | Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth |
| title_full | Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth |
| title_fullStr | Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth |
| title_full_unstemmed | Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth |
| title_short | Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth |
| title_sort | controlled lattice deformation for high mobility two dimensional mote2 growth |
| topic | Two-dimensional MoTe2 Chemical vapor deposition Lattice deformation Gibbs free energy Field-effect transistor |
| url | http://www.sciencedirect.com/science/article/pii/S2352847824000832 |
| work_keys_str_mv | AT ruishanli controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT mengyuhong controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT weishangguan controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT yanzhezhang controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT yiheliu controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT hejiang controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT huihuiyu controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT ligao controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT xiankunzhang controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT zhengzhang controlledlatticedeformationforhighmobilitytwodimensionalmote2growth AT yuezhang controlledlatticedeformationforhighmobilitytwodimensionalmote2growth |