On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition

Abstract This work presents a study of piezoelectric zinc oxide (ZnO) thin films deposited by a novel post‐reactive sputtering method. The process utilizes a rotating drum with DC magnetron sputtering deposition onto substrates with subsequent DC plasma‐assisted oxidation of the deposited metal to m...

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Main Authors: Michael McKinlay, Lewis Fleming, Manuel Pelayo García, Lucía Nieto Sierra, Pilar Villar Castro, Daniel Araujo, Basilio Javier García, Des Gibson, Carlos García Nuñez
Format: Article
Language:English
Published: Wiley-VCH 2024-11-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202400252
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author Michael McKinlay
Lewis Fleming
Manuel Pelayo García
Lucía Nieto Sierra
Pilar Villar Castro
Daniel Araujo
Basilio Javier García
Des Gibson
Carlos García Nuñez
author_facet Michael McKinlay
Lewis Fleming
Manuel Pelayo García
Lucía Nieto Sierra
Pilar Villar Castro
Daniel Araujo
Basilio Javier García
Des Gibson
Carlos García Nuñez
author_sort Michael McKinlay
collection DOAJ
description Abstract This work presents a study of piezoelectric zinc oxide (ZnO) thin films deposited by a novel post‐reactive sputtering method. The process utilizes a rotating drum with DC magnetron sputtering deposition onto substrates with subsequent DC plasma‐assisted oxidation of the deposited metal to metal oxide. The paper analyzes the influence of plasmaassisted magnetron sputtering (PA‐MS) deposition parameters (O2 plasma source power, O2 flow, and Ar flow) on the morphological, structural, optical, and piezoelectric properties of ZnO thin films. Design of experiments has been utilized to evaluate the role of these parameters on the growth rate (rg) and the properties of resulting films. Results indicate a predominant influence of the plasma power on the rg over other parameters. Among the eight tested samples, three of them show high crystal quality with high intensity (0001) diffraction peak, characteristic of the wurtzite crystalline structure of ZnO, and one of them exhibits piezoelectric coefficient values of ≈11pC N−1. That sample corresponding to a ZnO film deposited at the lowest rg of 0.075 nm s−1, confirmed the key role of the deposition parameters on the piezoelectric response of films, and demonstrated PA‐MS as a promising technique to produce high‐quality piezoelectric thin films.
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spelling doaj-art-e4983cb7e5b84f479a247652e5645f462025-08-20T02:14:51ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-11-011132n/an/a10.1002/admi.202400252On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter DepositionMichael McKinlay0Lewis Fleming1Manuel Pelayo García2Lucía Nieto Sierra3Pilar Villar Castro4Daniel Araujo5Basilio Javier García6Des Gibson7Carlos García Nuñez8Microelectronics Lab James Watt School of Engineering University of Glasgow Glasgow G12 8QQ United KingdomInstitute of Thin Films Sensors and Imaging University of the West of Scotland Paisley PA1 2BE United KingdomInstitute of Thin Films Sensors and Imaging University of the West of Scotland Paisley PA1 2BE United KingdomDepartment of Material Sciences Metallurgical Engineering and Inorganic Chemistry University of Cádiz Puerto Real 11510 SpainDepartment of Material Sciences Metallurgical Engineering and Inorganic Chemistry University of Cádiz Puerto Real 11510 SpainDepartment of Material Sciences Metallurgical Engineering and Inorganic Chemistry University of Cádiz Puerto Real 11510 SpainElectronics and Semiconductors Group Applied Physics Department Universidad Autónoma de Madrid Madrid 28049 SpainInstitute of Thin Films Sensors and Imaging University of the West of Scotland Paisley PA1 2BE United KingdomMicroelectronics Lab James Watt School of Engineering University of Glasgow Glasgow G12 8QQ United KingdomAbstract This work presents a study of piezoelectric zinc oxide (ZnO) thin films deposited by a novel post‐reactive sputtering method. The process utilizes a rotating drum with DC magnetron sputtering deposition onto substrates with subsequent DC plasma‐assisted oxidation of the deposited metal to metal oxide. The paper analyzes the influence of plasmaassisted magnetron sputtering (PA‐MS) deposition parameters (O2 plasma source power, O2 flow, and Ar flow) on the morphological, structural, optical, and piezoelectric properties of ZnO thin films. Design of experiments has been utilized to evaluate the role of these parameters on the growth rate (rg) and the properties of resulting films. Results indicate a predominant influence of the plasma power on the rg over other parameters. Among the eight tested samples, three of them show high crystal quality with high intensity (0001) diffraction peak, characteristic of the wurtzite crystalline structure of ZnO, and one of them exhibits piezoelectric coefficient values of ≈11pC N−1. That sample corresponding to a ZnO film deposited at the lowest rg of 0.075 nm s−1, confirmed the key role of the deposition parameters on the piezoelectric response of films, and demonstrated PA‐MS as a promising technique to produce high‐quality piezoelectric thin films.https://doi.org/10.1002/admi.202400252optoelectronicspiezoelectricsplasma physicsplasma‐assisted magnetron sputtering, PVDthin film depositionzinc oxide
spellingShingle Michael McKinlay
Lewis Fleming
Manuel Pelayo García
Lucía Nieto Sierra
Pilar Villar Castro
Daniel Araujo
Basilio Javier García
Des Gibson
Carlos García Nuñez
On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
Advanced Materials Interfaces
optoelectronics
piezoelectrics
plasma physics
plasma‐assisted magnetron sputtering, PVD
thin film deposition
zinc oxide
title On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
title_full On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
title_fullStr On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
title_full_unstemmed On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
title_short On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition
title_sort on the piezoelectric properties of zinc oxide thin films synthesized by plasma assisted dc sputter deposition
topic optoelectronics
piezoelectrics
plasma physics
plasma‐assisted magnetron sputtering, PVD
thin film deposition
zinc oxide
url https://doi.org/10.1002/admi.202400252
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