AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz
An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by r...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adbc79 |
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| author | Toshihiro Ohki Atsushi Yamada Yuichi Minoura Yusuke Kumazaki Kenji Saito Masaru Sato |
| author_facet | Toshihiro Ohki Atsushi Yamada Yuichi Minoura Yusuke Kumazaki Kenji Saito Masaru Sato |
| author_sort | Toshihiro Ohki |
| collection | DOAJ |
| description | An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by removing the residual Si at the substrate-epitaxial layer interface. These improvements, combined with the reduction in dislocation density and the elimination of the nucleation layer by using a free-standing GaN substrate, contributed to the enhanced efficiency. To the best of our knowledge, the achieved efficiency represents the highest reported for GaN-based discrete HEMTs in this frequency band. |
| format | Article |
| id | doaj-art-e47ff922b9dd4b35a7d1eee249199358 |
| institution | OA Journals |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-e47ff922b9dd4b35a7d1eee2491993582025-08-20T02:07:19ZengIOP PublishingApplied Physics Express1882-07862025-01-0118303400410.35848/1882-0786/adbc79AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHzToshihiro Ohki0https://orcid.org/0000-0003-3827-8625Atsushi Yamada1https://orcid.org/0000-0002-3317-2365Yuichi Minoura2Yusuke Kumazaki3Kenji Saito4Masaru Sato5Fujitsu Limited , Atsugi, Kanagawa 243-0197, JapanFujitsu Limited , Atsugi, Kanagawa 243-0197, JapanFujitsu Limited , Atsugi, Kanagawa 243-0197, JapanFujitsu Limited , Atsugi, Kanagawa 243-0197, JapanFujitsu Limited , Atsugi, Kanagawa 243-0197, JapanFujitsu Limited , Atsugi, Kanagawa 243-0197, JapanAn AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by removing the residual Si at the substrate-epitaxial layer interface. These improvements, combined with the reduction in dislocation density and the elimination of the nucleation layer by using a free-standing GaN substrate, contributed to the enhanced efficiency. To the best of our knowledge, the achieved efficiency represents the highest reported for GaN-based discrete HEMTs in this frequency band.https://doi.org/10.35848/1882-0786/adbc79GaN substrateGaNHEMTPAEefficiencyISM band |
| spellingShingle | Toshihiro Ohki Atsushi Yamada Yuichi Minoura Yusuke Kumazaki Kenji Saito Masaru Sato AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz Applied Physics Express GaN substrate GaN HEMT PAE efficiency ISM band |
| title | AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz |
| title_full | AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz |
| title_fullStr | AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz |
| title_full_unstemmed | AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz |
| title_short | AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz |
| title_sort | algan gan hemt on a free standing gan substrate with record 85 2 power added efficiency at 2 45 ghz |
| topic | GaN substrate GaN HEMT PAE efficiency ISM band |
| url | https://doi.org/10.35848/1882-0786/adbc79 |
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