AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz
An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by r...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adbc79 |
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| Summary: | An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by removing the residual Si at the substrate-epitaxial layer interface. These improvements, combined with the reduction in dislocation density and the elimination of the nucleation layer by using a free-standing GaN substrate, contributed to the enhanced efficiency. To the best of our knowledge, the achieved efficiency represents the highest reported for GaN-based discrete HEMTs in this frequency band. |
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| ISSN: | 1882-0786 |