Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach
Understanding the adsorption of adatom on the surface of an adsorbent and its interaction with defect sites should be considered in tailoring the growth of one-dimensional (1D) chains. Kinetic Monte Carlo simulation of a suitable atomistic lattice-gas model describing the adsorption and 1D submonola...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SAGE Publishing
2014-09-01
|
| Series: | Adsorption Science & Technology |
| Online Access: | https://doi.org/10.1260/0263-6174.32.9.749 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850086659043885056 |
|---|---|
| author | Jason R. Albia Marvin A. Albao Henry J. Ramos |
| author_facet | Jason R. Albia Marvin A. Albao Henry J. Ramos |
| author_sort | Jason R. Albia |
| collection | DOAJ |
| description | Understanding the adsorption of adatom on the surface of an adsorbent and its interaction with defect sites should be considered in tailoring the growth of one-dimensional (1D) chains. Kinetic Monte Carlo simulation of a suitable atomistic lattice-gas model describing the adsorption and 1D submonolayer growth of Al and In on Si(100): 2 × 1 was performed to investigate the resulting nanowire morphology in the presence of various C-defect densities at various deposition temperatures. Average island density (N av ) in Al/Si (100) generally obeys the classically predicted Arrhenius behaviour as temperature increases. By contrast, In adatoms exclusively nucleate on C defect, where N av is equivalent to defect density. In Al/Si (100) and In/Si (100), N av showed linear and ‘power law’ dependence on coverage, respectively, whereas the average island size (S av ) for both systems showed linear dependence on coverage. The nanowires morphology in the Al/Si (100) system showed considerable dependence on flux variation. Because of the low-diffusion barrier of In adatom and high-detachment barrier on C defect, In/Si (100) is insensitive to flux. Morphology of In chains is dictated by the defect density: an increase in defect density caused higher island density and smaller island sizes irrespective of coverage and flux rates. |
| format | Article |
| id | doaj-art-e47d4ab3e0cc4950b56bc48788b86c91 |
| institution | DOAJ |
| issn | 0263-6174 2048-4038 |
| language | English |
| publishDate | 2014-09-01 |
| publisher | SAGE Publishing |
| record_format | Article |
| series | Adsorption Science & Technology |
| spelling | doaj-art-e47d4ab3e0cc4950b56bc48788b86c912025-08-20T02:43:25ZengSAGE PublishingAdsorption Science & Technology0263-61742048-40382014-09-013210.1260/0263-6174.32.9.749Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo ApproachJason R. Albia0Marvin A. Albao1Henry J. Ramos2 Plasma Physics Laboratory, National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101, Philippines Computational Physics Laboratory, Institute of Mathematical Sciences and Physics, University of the Philippines, Los Baños 4031, Laguna, Philippines Plasma Physics Laboratory, National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101, PhilippinesUnderstanding the adsorption of adatom on the surface of an adsorbent and its interaction with defect sites should be considered in tailoring the growth of one-dimensional (1D) chains. Kinetic Monte Carlo simulation of a suitable atomistic lattice-gas model describing the adsorption and 1D submonolayer growth of Al and In on Si(100): 2 × 1 was performed to investigate the resulting nanowire morphology in the presence of various C-defect densities at various deposition temperatures. Average island density (N av ) in Al/Si (100) generally obeys the classically predicted Arrhenius behaviour as temperature increases. By contrast, In adatoms exclusively nucleate on C defect, where N av is equivalent to defect density. In Al/Si (100) and In/Si (100), N av showed linear and ‘power law’ dependence on coverage, respectively, whereas the average island size (S av ) for both systems showed linear dependence on coverage. The nanowires morphology in the Al/Si (100) system showed considerable dependence on flux variation. Because of the low-diffusion barrier of In adatom and high-detachment barrier on C defect, In/Si (100) is insensitive to flux. Morphology of In chains is dictated by the defect density: an increase in defect density caused higher island density and smaller island sizes irrespective of coverage and flux rates.https://doi.org/10.1260/0263-6174.32.9.749 |
| spellingShingle | Jason R. Albia Marvin A. Albao Henry J. Ramos Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach Adsorption Science & Technology |
| title | Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach |
| title_full | Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach |
| title_fullStr | Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach |
| title_full_unstemmed | Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach |
| title_short | Adsorption and One-Dimensional Growth of Al and in Chains on Si(100): 2×1: A Kinetic Monte Carlo Approach |
| title_sort | adsorption and one dimensional growth of al and in chains on si 100 2 1 a kinetic monte carlo approach |
| url | https://doi.org/10.1260/0263-6174.32.9.749 |
| work_keys_str_mv | AT jasonralbia adsorptionandonedimensionalgrowthofalandinchainsonsi10021akineticmontecarloapproach AT marvinaalbao adsorptionandonedimensionalgrowthofalandinchainsonsi10021akineticmontecarloapproach AT henryjramos adsorptionandonedimensionalgrowthofalandinchainsonsi10021akineticmontecarloapproach |