Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method
Separated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which indicates crystal quality of the active layers, and an accura...
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Taylor & Francis Group
2024-12-01
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| Series: | Science and Technology of Advanced Materials: Methods |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/27660400.2024.2315027 |
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| author | Keito Mori-Tamamura Yuchi Takahashi Shigeta Sakai Yuya Morimoto Junji Hirama Atsushi A. Yamaguchi Susumu Kusanagi Yuya Kanitani Yoshihiro Kudo Shigetaka Tomiya |
| author_facet | Keito Mori-Tamamura Yuchi Takahashi Shigeta Sakai Yuya Morimoto Junji Hirama Atsushi A. Yamaguchi Susumu Kusanagi Yuya Kanitani Yoshihiro Kudo Shigetaka Tomiya |
| author_sort | Keito Mori-Tamamura |
| collection | DOAJ |
| description | Separated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which indicates crystal quality of the active layers, and an accurate method for estimating the IQE values is required. The IQE is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is 100%. However, III-nitride semiconductor materials, used in many optical devices, usually have large defect density, and the assumption is not necessarily valid. In our previous report, we demonstrated the simultaneous photoacoustic (PA) and PL measurements to accurately estimate the IQE values in GaN films with various qualities and obtained reasonable results. In this work, we have successfully realized reproducible measurements with high accuracy for an InGaN-QW sample by suppressing the background noise significantly. Furthermore, we have also measured the values of EQE by using an integrating-sphere. Since the light extraction efficiency (LEE) can be obtained by the values of IQE and EQE, it has been shown that the overall picture of emission efficiency can be provided by our method. |
| format | Article |
| id | doaj-art-e41a71acd27f466ca3477302dd2b395f |
| institution | OA Journals |
| issn | 2766-0400 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials: Methods |
| spelling | doaj-art-e41a71acd27f466ca3477302dd2b395f2025-08-20T01:55:11ZengTaylor & Francis GroupScience and Technology of Advanced Materials: Methods2766-04002024-12-014110.1080/27660400.2024.2315027Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere methodKeito Mori-Tamamura0Yuchi Takahashi1Shigeta Sakai2Yuya Morimoto3Junji Hirama4Atsushi A. Yamaguchi5Susumu Kusanagi6Yuya Kanitani7Yoshihiro Kudo8Shigetaka Tomiya9Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanOptoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanResearch Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanResearch Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanResearch Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanResearch Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanSeparated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which indicates crystal quality of the active layers, and an accurate method for estimating the IQE values is required. The IQE is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is 100%. However, III-nitride semiconductor materials, used in many optical devices, usually have large defect density, and the assumption is not necessarily valid. In our previous report, we demonstrated the simultaneous photoacoustic (PA) and PL measurements to accurately estimate the IQE values in GaN films with various qualities and obtained reasonable results. In this work, we have successfully realized reproducible measurements with high accuracy for an InGaN-QW sample by suppressing the background noise significantly. Furthermore, we have also measured the values of EQE by using an integrating-sphere. Since the light extraction efficiency (LEE) can be obtained by the values of IQE and EQE, it has been shown that the overall picture of emission efficiency can be provided by our method.https://www.tandfonline.com/doi/10.1080/27660400.2024.2315027InGaN quantum wellinternal quantum efficiencyphotoluminescencephotoacoustic |
| spellingShingle | Keito Mori-Tamamura Yuchi Takahashi Shigeta Sakai Yuya Morimoto Junji Hirama Atsushi A. Yamaguchi Susumu Kusanagi Yuya Kanitani Yoshihiro Kudo Shigetaka Tomiya Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method Science and Technology of Advanced Materials: Methods InGaN quantum well internal quantum efficiency photoluminescence photoacoustic |
| title | Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| title_full | Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| title_fullStr | Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| title_full_unstemmed | Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| title_short | Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method |
| title_sort | absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in ingan single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating sphere method |
| topic | InGaN quantum well internal quantum efficiency photoluminescence photoacoustic |
| url | https://www.tandfonline.com/doi/10.1080/27660400.2024.2315027 |
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