MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication
We report on the progress made in the development of 1550 nm vertical-cavity surface-emitting lasers (VCSELs) for data transmission applications. These lasers were grown using molecular beam epitaxy and manufactured through wafer fusion. Such devices exhibit high speed and high optical output power,...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | JPhys Photonics |
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| Online Access: | https://doi.org/10.1088/2515-7647/adef20 |
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| author | Georgiy Sapunov Ilya Derebezov Sergey Blokhin Iakov Kovach Si-Cong Tian Mansoor A Maricar Leonid Karachinsky Innokenty Novikov Andrey Babichev Andrey Gladyshev Anton Egorov Dieter Bimberg |
| author_facet | Georgiy Sapunov Ilya Derebezov Sergey Blokhin Iakov Kovach Si-Cong Tian Mansoor A Maricar Leonid Karachinsky Innokenty Novikov Andrey Babichev Andrey Gladyshev Anton Egorov Dieter Bimberg |
| author_sort | Georgiy Sapunov |
| collection | DOAJ |
| description | We report on the progress made in the development of 1550 nm vertical-cavity surface-emitting lasers (VCSELs) for data transmission applications. These lasers were grown using molecular beam epitaxy and manufactured through wafer fusion. Such devices exhibit high speed and high optical output power, benefitting from GaAs-based mirrors and an InP-based active region. We investigate their static and dynamic performance in order to optimize for long-distance fiber-optic communication. We achieved record data rates of 40 Gbps across 1 m single-mode optical fiber with a single-mode power exceeding 3.8 mW by using signal pre-emphasis. Long-distance tests show, that these VCSELs are capable of transmitting more than 27 Gbps across a 2 km single-mode fiber, and can achieve as low as 600 fJ energy consumption per bit transferred. |
| format | Article |
| id | doaj-art-e410ce32c9a24b53826eae7cfc886876 |
| institution | DOAJ |
| issn | 2515-7647 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Photonics |
| spelling | doaj-art-e410ce32c9a24b53826eae7cfc8868762025-08-20T03:09:31ZengIOP PublishingJPhys Photonics2515-76472025-01-017303503210.1088/2515-7647/adef20MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communicationGeorgiy Sapunov0https://orcid.org/0000-0002-4314-2178Ilya Derebezov1https://orcid.org/0009-0007-5708-1955Sergey Blokhin2Iakov Kovach3Si-Cong Tian4https://orcid.org/0009-0001-3610-5993Mansoor A Maricar5Leonid Karachinsky6Innokenty Novikov7https://orcid.org/0000-0003-1983-0242Andrey Babichev8https://orcid.org/0000-0002-3463-4744Andrey Gladyshev9Anton Egorov10Dieter Bimberg11Bimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Dong Nanhu Road 3888, Changchun, People’s Republic of ChinaBimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Dong Nanhu Road 3888, Changchun, People’s Republic of ChinaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaBimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Dong Nanhu Road 3888, Changchun, People’s Republic of China; Center of Nanophotonics, Institute of Physics and Astronomy, Technical University of Berlin , Hardenbergstr. 36, Berlin, GermanyBimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Dong Nanhu Road 3888, Changchun, People’s Republic of ChinaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaITMO University , Kronverksky Pr. 49 bldg. A, Saint Petersburg, RussiaBimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Dong Nanhu Road 3888, Changchun, People’s Republic of China; Center of Nanophotonics, Institute of Physics and Astronomy, Technical University of Berlin , Hardenbergstr. 36, Berlin, GermanyWe report on the progress made in the development of 1550 nm vertical-cavity surface-emitting lasers (VCSELs) for data transmission applications. These lasers were grown using molecular beam epitaxy and manufactured through wafer fusion. Such devices exhibit high speed and high optical output power, benefitting from GaAs-based mirrors and an InP-based active region. We investigate their static and dynamic performance in order to optimize for long-distance fiber-optic communication. We achieved record data rates of 40 Gbps across 1 m single-mode optical fiber with a single-mode power exceeding 3.8 mW by using signal pre-emphasis. Long-distance tests show, that these VCSELs are capable of transmitting more than 27 Gbps across a 2 km single-mode fiber, and can achieve as low as 600 fJ energy consumption per bit transferred.https://doi.org/10.1088/2515-7647/adef201550 nm VCSELshigh-speed data communicationsingle-modeMBE wafer fusionintra-cavity contactsQW-based active region |
| spellingShingle | Georgiy Sapunov Ilya Derebezov Sergey Blokhin Iakov Kovach Si-Cong Tian Mansoor A Maricar Leonid Karachinsky Innokenty Novikov Andrey Babichev Andrey Gladyshev Anton Egorov Dieter Bimberg MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication JPhys Photonics 1550 nm VCSELs high-speed data communication single-mode MBE wafer fusion intra-cavity contacts QW-based active region |
| title | MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication |
| title_full | MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication |
| title_fullStr | MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication |
| title_full_unstemmed | MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication |
| title_short | MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication |
| title_sort | mbe grown 1550 nm wafer fused vcsels for large data rate and energy efficient communication |
| topic | 1550 nm VCSELs high-speed data communication single-mode MBE wafer fusion intra-cavity contacts QW-based active region |
| url | https://doi.org/10.1088/2515-7647/adef20 |
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