MBE-grown 1550 nm wafer-fused VCSELs for large data rate and energy efficient communication
We report on the progress made in the development of 1550 nm vertical-cavity surface-emitting lasers (VCSELs) for data transmission applications. These lasers were grown using molecular beam epitaxy and manufactured through wafer fusion. Such devices exhibit high speed and high optical output power,...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | JPhys Photonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7647/adef20 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | We report on the progress made in the development of 1550 nm vertical-cavity surface-emitting lasers (VCSELs) for data transmission applications. These lasers were grown using molecular beam epitaxy and manufactured through wafer fusion. Such devices exhibit high speed and high optical output power, benefitting from GaAs-based mirrors and an InP-based active region. We investigate their static and dynamic performance in order to optimize for long-distance fiber-optic communication. We achieved record data rates of 40 Gbps across 1 m single-mode optical fiber with a single-mode power exceeding 3.8 mW by using signal pre-emphasis. Long-distance tests show, that these VCSELs are capable of transmitting more than 27 Gbps across a 2 km single-mode fiber, and can achieve as low as 600 fJ energy consumption per bit transferred. |
|---|---|
| ISSN: | 2515-7647 |