Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen

Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen

To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltag...

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Bibliographic Details
Main Authors: Qi Liu, Jingbo Zhou, Xuanze Zhou, Man Hoi Wong, Huidong Yao, Jinyang Liu, Xiaodong Zhang, Guangwei Xu, Shibing Long
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
Ga2O3
enhancement mode
vertical MOSFET
ion implantation
Online Access:https://doi.org/10.35848/1882-0786/adcafe
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