Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen
To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltag...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adcafe |
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| author | Qi Liu Jingbo Zhou Xuanze Zhou Man Hoi Wong Huidong Yao Jinyang Liu Xiaodong Zhang Guangwei Xu Shibing Long |
| author_facet | Qi Liu Jingbo Zhou Xuanze Zhou Man Hoi Wong Huidong Yao Jinyang Liu Xiaodong Zhang Guangwei Xu Shibing Long |
| author_sort | Qi Liu |
| collection | DOAJ |
| description | To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole–Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β -Ga _2 O _3 power MOSFETs. |
| format | Article |
| id | doaj-art-e3d782dce7644181b78bcfc7349edd5c |
| institution | DOAJ |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-e3d782dce7644181b78bcfc7349edd5c2025-08-20T03:13:29ZengIOP PublishingApplied Physics Express1882-07862025-01-0118404100310.35848/1882-0786/adcafeImproved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygenQi Liu0https://orcid.org/0000-0001-9913-8939Jingbo Zhou1https://orcid.org/0009-0007-2754-4162Xuanze Zhou2https://orcid.org/0000-0001-9905-150XMan Hoi Wong3https://orcid.org/0000-0002-0908-4509Huidong Yao4https://orcid.org/0009-0009-2777-4712Jinyang Liu5https://orcid.org/0009-0006-1990-321XXiaodong Zhang6https://orcid.org/0000-0002-7528-9828Guangwei Xu7https://orcid.org/0000-0001-8029-0383Shibing Long8https://orcid.org/0000-0001-6220-4461School of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaDepartment of Electronic and Computer Engineering, Hong Kong University of Science and Technology , Hong Kong, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics , CAS, Suzhou 215123, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaSchool of Microelectronics, University of Science and Technology of China , Hefei 230026, ChinaTo improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole–Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β -Ga _2 O _3 power MOSFETs.https://doi.org/10.35848/1882-0786/adcafeGa2O3enhancement modevertical MOSFETion implantation |
| spellingShingle | Qi Liu Jingbo Zhou Xuanze Zhou Man Hoi Wong Huidong Yao Jinyang Liu Xiaodong Zhang Guangwei Xu Shibing Long Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen Applied Physics Express Ga2O3 enhancement mode vertical MOSFET ion implantation |
| title | Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen |
| title_full | Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen |
| title_fullStr | Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen |
| title_full_unstemmed | Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen |
| title_short | Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen |
| title_sort | improved blocking capability of n ion implanted β ga2o3 u shaped trench gate mosfet by annealing in oxygen |
| topic | Ga2O3 enhancement mode vertical MOSFET ion implantation |
| url | https://doi.org/10.35848/1882-0786/adcafe |
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