Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adcb87 |
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| Summary: | We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak temperature, improving device performance and reliability. A combination of optimized low-temperature diamond growth at 500 °C with the thermally stable molybdenum gate metal and MOCVD-grown SiN _x gate-dielectric was utilized for the successful integration. The fabricated device exhibited a I _DSS of 0.96 A mm ^−1 and an ON-to-OFF ratio of 10 ^5 . This marks the first post-process diamond integration on a RF GaN HEMT device. |
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| ISSN: | 1882-0786 |