APA (7th ed.) Citation

Soman, R., Malakoutian, M., Kim, J., Akso, E., Hatui, N., Wurm, C., . . . Chowdhury, S. Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling. IOP Publishing.

Chicago Style (17th ed.) Citation

Soman, Rohith, Mohamadali Malakoutian, Jeong-kyu Kim, Emre Akso, Nirupam Hatui, Christian Wurm, Umesh Mishra, and Srabanti Chowdhury. Integration of 150 Nm Gate Length N-polar GaN MIS-HEMT Devices with All-around Diamond for Device-level Cooling. IOP Publishing.

MLA (9th ed.) Citation

Soman, Rohith, et al. Integration of 150 Nm Gate Length N-polar GaN MIS-HEMT Devices with All-around Diamond for Device-level Cooling. IOP Publishing.