Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size

Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an i...

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Main Authors: Boyuan Cai, Haoran Jiang, Run Bai, Shengting Zhu, Yinan Zhang, Haoyi Yu, Min Gu, Qiming Zhang
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/7/531
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author Boyuan Cai
Haoran Jiang
Run Bai
Shengting Zhu
Yinan Zhang
Haoyi Yu
Min Gu
Qiming Zhang
author_facet Boyuan Cai
Haoran Jiang
Run Bai
Shengting Zhu
Yinan Zhang
Haoyi Yu
Min Gu
Qiming Zhang
author_sort Boyuan Cai
collection DOAJ
description Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr<sub>3</sub> PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr<sub>3</sub> perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr<sub>3</sub> PQDs materials.
format Article
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institution OA Journals
issn 2079-4991
language English
publishDate 2025-03-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj-art-e3919c85c40e4619bca7e3d613c958092025-08-20T02:15:46ZengMDPI AGNanomaterials2079-49912025-03-0115753110.3390/nano15070531Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature SizeBoyuan Cai0Haoran Jiang1Run Bai2Shengting Zhu3Yinan Zhang4Haoyi Yu5Min Gu6Qiming Zhang7School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaPerovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr<sub>3</sub> PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr<sub>3</sub> perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr<sub>3</sub> PQDs materials.https://www.mdpi.com/2079-4991/15/7/531perovskite luminescent quantum dotshigh-resolution three-dimensional patterningfemtosecond laser direct writingmulti-level fluorescence modulation
spellingShingle Boyuan Cai
Haoran Jiang
Run Bai
Shengting Zhu
Yinan Zhang
Haoyi Yu
Min Gu
Qiming Zhang
Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
Nanomaterials
perovskite luminescent quantum dots
high-resolution three-dimensional patterning
femtosecond laser direct writing
multi-level fluorescence modulation
title Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
title_full Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
title_fullStr Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
title_full_unstemmed Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
title_short Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
title_sort three dimensional high resolution laser lithography of cspbbr sub 3 sub quantum dots in photoresist with sub 100 nm feature size
topic perovskite luminescent quantum dots
high-resolution three-dimensional patterning
femtosecond laser direct writing
multi-level fluorescence modulation
url https://www.mdpi.com/2079-4991/15/7/531
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