Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size
Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an i...
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MDPI AG
2025-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/7/531 |
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| author | Boyuan Cai Haoran Jiang Run Bai Shengting Zhu Yinan Zhang Haoyi Yu Min Gu Qiming Zhang |
| author_facet | Boyuan Cai Haoran Jiang Run Bai Shengting Zhu Yinan Zhang Haoyi Yu Min Gu Qiming Zhang |
| author_sort | Boyuan Cai |
| collection | DOAJ |
| description | Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr<sub>3</sub> PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr<sub>3</sub> perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr<sub>3</sub> PQDs materials. |
| format | Article |
| id | doaj-art-e3919c85c40e4619bca7e3d613c95809 |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-e3919c85c40e4619bca7e3d613c958092025-08-20T02:15:46ZengMDPI AGNanomaterials2079-49912025-03-0115753110.3390/nano15070531Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature SizeBoyuan Cai0Haoran Jiang1Run Bai2Shengting Zhu3Yinan Zhang4Haoyi Yu5Min Gu6Qiming Zhang7School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, ChinaPerovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr<sub>3</sub> PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr<sub>3</sub> perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr<sub>3</sub> PQDs materials.https://www.mdpi.com/2079-4991/15/7/531perovskite luminescent quantum dotshigh-resolution three-dimensional patterningfemtosecond laser direct writingmulti-level fluorescence modulation |
| spellingShingle | Boyuan Cai Haoran Jiang Run Bai Shengting Zhu Yinan Zhang Haoyi Yu Min Gu Qiming Zhang Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size Nanomaterials perovskite luminescent quantum dots high-resolution three-dimensional patterning femtosecond laser direct writing multi-level fluorescence modulation |
| title | Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size |
| title_full | Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size |
| title_fullStr | Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size |
| title_full_unstemmed | Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size |
| title_short | Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size |
| title_sort | three dimensional high resolution laser lithography of cspbbr sub 3 sub quantum dots in photoresist with sub 100 nm feature size |
| topic | perovskite luminescent quantum dots high-resolution three-dimensional patterning femtosecond laser direct writing multi-level fluorescence modulation |
| url | https://www.mdpi.com/2079-4991/15/7/531 |
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