Three-Dimensional High-Resolution Laser Lithography of CsPbBr<sub>3</sub> Quantum Dots in Photoresist with Sub-100 nm Feature Size

Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an i...

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Bibliographic Details
Main Authors: Boyuan Cai, Haoran Jiang, Run Bai, Shengting Zhu, Yinan Zhang, Haoyi Yu, Min Gu, Qiming Zhang
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/7/531
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Summary:Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr<sub>3</sub> PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr<sub>3</sub> perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr<sub>3</sub> PQDs materials.
ISSN:2079-4991