Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states
Abstract Chalcogenide glass has a unique volatile transition between high‐ and low‐resistance states under an electric field, a phenomenon termed ovonic threshold switching (OTS). This characteristic is extensively utilized in various electronic memory and computational devices, particularly as sele...
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| Format: | Article |
| Language: | English |
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Wiley
2025-02-01
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| Series: | Electron |
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| Online Access: | https://doi.org/10.1002/elt2.46 |
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| _version_ | 1849422771663142912 |
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| author | Xianliang Mai Qundao Xu Zhe Yang Huan Wang Yongpeng Liu Yinghua Shen Hengyi Hu Meng Xu Zhongrui Wang Hao Tong Chengliang Wang Xiangshui Miao Ming Xu |
| author_facet | Xianliang Mai Qundao Xu Zhe Yang Huan Wang Yongpeng Liu Yinghua Shen Hengyi Hu Meng Xu Zhongrui Wang Hao Tong Chengliang Wang Xiangshui Miao Ming Xu |
| author_sort | Xianliang Mai |
| collection | DOAJ |
| description | Abstract Chalcogenide glass has a unique volatile transition between high‐ and low‐resistance states under an electric field, a phenomenon termed ovonic threshold switching (OTS). This characteristic is extensively utilized in various electronic memory and computational devices, particularly as selectors for cross‐point memory architectures. Despite its advantages, the material is susceptible to glass relaxation, which can result in substantial drifts in threshold voltage and a decline in off‐current performance over successive operational cycles or long storage time. In this study, we introduce an OTS device made from stoichiometric Sb2Se3 glass, which retains an octahedral local structure within its amorphous matrix. This innovative material exhibits outstanding OTS capabilities, maintaining minimal degradation despite undergoing over 107 operating cycles. Via comprehensive first‐principles calculations, our findings indicate that the mid‐gap states in amorphous Sb2Se3 predominantly stem from the atomic chains characterized by heteropolar Sb‐Se bonds. These bonds exhibit remarkable stability, showing minimal alteration over time, thereby contributing to the overall durability and consistent performance of the material. Our findings not only shed light on the complex physical origins that govern the OTS behavior but also lay the groundwork for creating or optimizing innovative electrical switching materials. |
| format | Article |
| id | doaj-art-e378addd507d4310bb3a11f2c74cd47f |
| institution | Kabale University |
| issn | 2751-2606 2751-2614 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electron |
| spelling | doaj-art-e378addd507d4310bb3a11f2c74cd47f2025-08-20T03:30:56ZengWileyElectron2751-26062751-26142025-02-0131n/an/a10.1002/elt2.46Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap statesXianliang Mai0Qundao Xu1Zhe Yang2Huan Wang3Yongpeng Liu4Yinghua Shen5Hengyi Hu6Meng Xu7Zhongrui Wang8Hao Tong9Chengliang Wang10Xiangshui Miao11Ming Xu12Wuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaDepartment of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ChinaDepartment of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaWuhan National Laboratory for Optoelectronics School of Integrated Circuits Huazhong University of Science and Technology Wuhan ChinaAbstract Chalcogenide glass has a unique volatile transition between high‐ and low‐resistance states under an electric field, a phenomenon termed ovonic threshold switching (OTS). This characteristic is extensively utilized in various electronic memory and computational devices, particularly as selectors for cross‐point memory architectures. Despite its advantages, the material is susceptible to glass relaxation, which can result in substantial drifts in threshold voltage and a decline in off‐current performance over successive operational cycles or long storage time. In this study, we introduce an OTS device made from stoichiometric Sb2Se3 glass, which retains an octahedral local structure within its amorphous matrix. This innovative material exhibits outstanding OTS capabilities, maintaining minimal degradation despite undergoing over 107 operating cycles. Via comprehensive first‐principles calculations, our findings indicate that the mid‐gap states in amorphous Sb2Se3 predominantly stem from the atomic chains characterized by heteropolar Sb‐Se bonds. These bonds exhibit remarkable stability, showing minimal alteration over time, thereby contributing to the overall durability and consistent performance of the material. Our findings not only shed light on the complex physical origins that govern the OTS behavior but also lay the groundwork for creating or optimizing innovative electrical switching materials.https://doi.org/10.1002/elt2.46chalcogenide glassfirst‐principles calculationovonic threshold switchingphase change memorySb2Se3 |
| spellingShingle | Xianliang Mai Qundao Xu Zhe Yang Huan Wang Yongpeng Liu Yinghua Shen Hengyi Hu Meng Xu Zhongrui Wang Hao Tong Chengliang Wang Xiangshui Miao Ming Xu Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states Electron chalcogenide glass first‐principles calculation ovonic threshold switching phase change memory Sb2Se3 |
| title | Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states |
| title_full | Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states |
| title_fullStr | Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states |
| title_full_unstemmed | Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states |
| title_short | Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states |
| title_sort | sb se based electrical switching device with fast transition speed and minimized performance degradation due to stable mid gap states |
| topic | chalcogenide glass first‐principles calculation ovonic threshold switching phase change memory Sb2Se3 |
| url | https://doi.org/10.1002/elt2.46 |
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