Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device –injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies....

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Main Authors: V.N. Murashev, S.A. Legotin, P.A. Ivshin, K.I. Tapero, O.I. Rabinovich, D. Elnikov, A.A. Krasnov, K.A. Kuz’mina
Format: Article
Language:English
Published: Sumy State University 2014-07-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03021.pdf
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author V.N. Murashev
S.A. Legotin
P.A. Ivshin
K.I. Tapero
O.I. Rabinovich
D. Elnikov
A.A. Krasnov
K.A. Kuz’mina
author_facet V.N. Murashev
S.A. Legotin
P.A. Ivshin
K.I. Tapero
O.I. Rabinovich
D. Elnikov
A.A. Krasnov
K.A. Kuz’mina
author_sort V.N. Murashev
collection DOAJ
description Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device –injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors.
format Article
id doaj-art-e360d5c51e674e799b0bdfcd97839a1a
institution OA Journals
issn 2077-6772
language English
publishDate 2014-07-01
publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-e360d5c51e674e799b0bdfcd97839a1a2025-08-20T02:04:17ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-07-016303021-103021-4Thermal and Magnetic Field Sensors Based on Injection-coupled DevicesV.N. Murashev0S.A. Legotin1P.A. Ivshin2K.I. Tapero3O.I. Rabinovich4D. Elnikov5A.A. Krasnov6K.A. Kuz’mina7National University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationResearch Institute of Scientific Instruments (RISI), 8, Turayevo, 140080 Lytkarino, Moscow Region, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationNational University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian FederationOperation principle and possible applications of a novel type of silicon integrated circuit (IC) device –injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors.http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03021.pdfSensorTemperatureMagnetic fieldFunctionally integrated structur
spellingShingle V.N. Murashev
S.A. Legotin
P.A. Ivshin
K.I. Tapero
O.I. Rabinovich
D. Elnikov
A.A. Krasnov
K.A. Kuz’mina
Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
Журнал нано- та електронної фізики
Sensor
Temperature
Magnetic field
Functionally integrated structur
title Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
title_full Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
title_fullStr Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
title_full_unstemmed Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
title_short Thermal and Magnetic Field Sensors Based on Injection-coupled Devices
title_sort thermal and magnetic field sensors based on injection coupled devices
topic Sensor
Temperature
Magnetic field
Functionally integrated structur
url http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03021.pdf
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AT paivshin thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices
AT kitapero thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices
AT oirabinovich thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices
AT delnikov thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices
AT aakrasnov thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices
AT kakuzmina thermalandmagneticfieldsensorsbasedoninjectioncoupleddevices