Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell
Abstract From the time of discovery, CH3NH3SnI3 has been a promising candidate in photovoltaics due to its outstanding optoelectronic properties. However, stabilization was not easy to achieve in CH3NH3SnI3-based solar cells. Because CH3NH3SnI3 was used as an absorber, its naturally-occurring self-d...
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Nature Portfolio
2025-01-01
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| Online Access: | https://doi.org/10.1038/s41598-024-74964-7 |
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| author | Sonal Santosh Bagade Piyush K. Patel |
| author_facet | Sonal Santosh Bagade Piyush K. Patel |
| author_sort | Sonal Santosh Bagade |
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| description | Abstract From the time of discovery, CH3NH3SnI3 has been a promising candidate in photovoltaics due to its outstanding optoelectronic properties. However, stabilization was not easy to achieve in CH3NH3SnI3-based solar cells. Because CH3NH3SnI3 was used as an absorber, its naturally-occurring self-doping property spontaneously modified band alignment, which increased carrier recombination and decreased the efficiency of solar cell gradually. In this paper, for the first time, we have presented detailed study on use of CH3NH3SnI3 as a hole transport layer in prototype solar cell having configuration: CH3NH3SnI3/CZTS/CdS/ZnO/AZO, using SCAPS software. To understand the effect of spontaneous self-doping property of CH3NH3SnI3 on solar cell performance, the analysis of variation in solar cell performance parameters, band alignment conduction band, valance band, Fermi levels, charge density, current density, conductance, capacitance and recombination rate was performed as a function of increasing CH3NH3SnI3 carrier concentration. It was found that, when used as an hole transport layer, the inherent self-doping property of CH3NH3SnI3 became a helpful trait to increase hole extraction and spontaneously enhanced our device efficiency. Thus, the inherent self-doping property of CH3NH3SnI3 transformed from curse to boon when we leveraged CH3NH3SnI3 as an hole transport layer in our solar cell device. |
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| institution | Kabale University |
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| language | English |
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| spelling | doaj-art-e2f5da3676ba42ba8497d855ec3af77b2025-01-26T12:24:20ZengNature PortfolioScientific Reports2045-23222025-01-0115111810.1038/s41598-024-74964-7Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cellSonal Santosh Bagade0Piyush K. Patel1Renewable Energy Laboratory, Department of Physics, Maulana Azad National Institute of TechnologyRenewable Energy Laboratory, Department of Physics, Maulana Azad National Institute of TechnologyAbstract From the time of discovery, CH3NH3SnI3 has been a promising candidate in photovoltaics due to its outstanding optoelectronic properties. However, stabilization was not easy to achieve in CH3NH3SnI3-based solar cells. Because CH3NH3SnI3 was used as an absorber, its naturally-occurring self-doping property spontaneously modified band alignment, which increased carrier recombination and decreased the efficiency of solar cell gradually. In this paper, for the first time, we have presented detailed study on use of CH3NH3SnI3 as a hole transport layer in prototype solar cell having configuration: CH3NH3SnI3/CZTS/CdS/ZnO/AZO, using SCAPS software. To understand the effect of spontaneous self-doping property of CH3NH3SnI3 on solar cell performance, the analysis of variation in solar cell performance parameters, band alignment conduction band, valance band, Fermi levels, charge density, current density, conductance, capacitance and recombination rate was performed as a function of increasing CH3NH3SnI3 carrier concentration. It was found that, when used as an hole transport layer, the inherent self-doping property of CH3NH3SnI3 became a helpful trait to increase hole extraction and spontaneously enhanced our device efficiency. Thus, the inherent self-doping property of CH3NH3SnI3 transformed from curse to boon when we leveraged CH3NH3SnI3 as an hole transport layer in our solar cell device.https://doi.org/10.1038/s41598-024-74964-7Spontaneous oxidationCharge carrier concentrationConductanceFermi levelBack-contact recombination rateSCAPS software |
| spellingShingle | Sonal Santosh Bagade Piyush K. Patel Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell Scientific Reports Spontaneous oxidation Charge carrier concentration Conductance Fermi level Back-contact recombination rate SCAPS software |
| title | Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell |
| title_full | Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell |
| title_fullStr | Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell |
| title_full_unstemmed | Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell |
| title_short | Salutary impact of spontaneous oxidation in CH3NH3SnI3 on CZTS-based solar cell |
| title_sort | salutary impact of spontaneous oxidation in ch3nh3sni3 on czts based solar cell |
| topic | Spontaneous oxidation Charge carrier concentration Conductance Fermi level Back-contact recombination rate SCAPS software |
| url | https://doi.org/10.1038/s41598-024-74964-7 |
| work_keys_str_mv | AT sonalsantoshbagade salutaryimpactofspontaneousoxidationinch3nh3sni3oncztsbasedsolarcell AT piyushkpatel salutaryimpactofspontaneousoxidationinch3nh3sni3oncztsbasedsolarcell |