Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects
Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-depend...
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| Main Authors: | P. Anandan, N. Malathi, N. Mohankumar |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Modelling and Simulation in Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/635803 |
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