High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area
Abstract We propose a new drain-extended FinFET (DeFinFET) that can improve the intrinsic gain (g m/g ds) and the electrical safe operating area (SOA). This structure features a novel utilization of the drain potential by using a floating poly (FP) and split high-k material (HK) on the drain and dri...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-11-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-79881-3 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|