APA (7th ed.) Citation

Oh, K., Kim, H., Kim, Y., Yoo, H., Choi, M., Maeng, W., . . . Baek, C. High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. Nature Portfolio.

Chicago Style (17th ed.) Citation

Oh, Kyounghwan, Hyangwoo Kim, Yijoon Kim, Hyeongseok Yoo, Minkeun Choi, Wooyeol Maeng, Sutae Kim, Hyung-Jin Lee, and Chang-Ki Baek. High-voltage FinFET with Floating Poly and High-k Material for Enhanced Intrinsic Gain and Safe Operating Area. Nature Portfolio.

MLA (9th ed.) Citation

Oh, Kyounghwan, et al. High-voltage FinFET with Floating Poly and High-k Material for Enhanced Intrinsic Gain and Safe Operating Area. Nature Portfolio.