Accurate Modeling and Efficiency Optimization of High Frequency BCM Mode Boost Converter Based on GaN Devices
With further population of gallium nitride (GaN) devices, traditional boost topology has an opportunity to obtain a higher power density with a higher switching frequency. However, high-frequency switching loss of GaN devices has become one important factor restricting improvement of converter effic...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
China electric power research institute
2025-01-01
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| Series: | CSEE Journal of Power and Energy Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10246188/ |
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