Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors
Abstract The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-09-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400071 |
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