High-temperature terahertz quantum-cascade lasers: design optimization and experimental results

Objectives. Terahertz quantum-cascade lasers (THz QCLs) are compact solid-state lasers pumped by electrical injection to generate radiation in the range from 1.2 to 5.4 THz. The THz QCL operating frequency band contains absorption lines for a number of substances that are suitable for biomedical and...

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Main Authors: D. V. Ushakov, A. A. Afonenko, I. A. Glinskiy, R. A. Khabibullin
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2022-06-01
Series:Российский технологический журнал
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Online Access:https://www.rtj-mirea.ru/jour/article/view/521
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author D. V. Ushakov
A. A. Afonenko
I. A. Glinskiy
R. A. Khabibullin
author_facet D. V. Ushakov
A. A. Afonenko
I. A. Glinskiy
R. A. Khabibullin
author_sort D. V. Ushakov
collection DOAJ
description Objectives. Terahertz quantum-cascade lasers (THz QCLs) are compact solid-state lasers pumped by electrical injection to generate radiation in the range from 1.2 to 5.4 THz. The THz QCL operating frequency band contains absorption lines for a number of substances that are suitable for biomedical and environmental applications. In order to reduce the size and cost of THz QCLs and simplify the use of THz sources in these applications, it is necessary to increase the operating temperature of lasers.Methods. To calculate electron transport in THz QCLs, we used a system of balance equations based on wave functions with reduced dipole moments of tunnel-bound states.Results. As a result of the calculations, an original band design with a period based on three GaAs/Al0.18Ga0.82As quantum wells (QWs) and a gain maximum at about 3.3 THz was proposed. Based on the developed design, a THz QCL was fabricated, including the growth of a laser structure by molecular beam epitaxy, postgrowth processing to form strip lasers with a double metal waveguide, as well as an assembly of lasers mounted on a heat sink. The developed THz QCLs was capable of lasing at temperatures of up to 125 K as predicted by the performed calculations. We also studied band designs based on two GaAs/AlxGa1–xAs QWs having varying aluminum contents in the barrier layers (x = 0.20, 0.25, and 0.30).Conclusions. The calculated temperature dependences of the peak gain for two-QW designs with x > 0.2 confirm the possibility of creating THz QCLs operating at temperatures above 200 K. Thus, we have proposed two-QW band designs that outperform existing high-temperature designs in terms of maximum operating temperature.
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institution Kabale University
issn 2782-3210
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publisher MIREA - Russian Technological University
record_format Article
series Российский технологический журнал
spelling doaj-art-e26ee82433924e8d9288a3bd7a5dccdd2025-08-20T03:57:27ZrusMIREA - Russian Technological UniversityРоссийский технологический журнал2782-32102500-316X2022-06-01103455510.32362/2500-316X-2022-10-3-45-55317High-temperature terahertz quantum-cascade lasers: design optimization and experimental resultsD. V. Ushakov0A. A. Afonenko1I. A. Glinskiy2R. A. Khabibullin3Belarusian State UniversityBelarusian State UniversityInstitute of Ultra High Frequency Semiconductor Electronics, Russian Academy of SciencesInstitute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences; Ioffe InstituteObjectives. Terahertz quantum-cascade lasers (THz QCLs) are compact solid-state lasers pumped by electrical injection to generate radiation in the range from 1.2 to 5.4 THz. The THz QCL operating frequency band contains absorption lines for a number of substances that are suitable for biomedical and environmental applications. In order to reduce the size and cost of THz QCLs and simplify the use of THz sources in these applications, it is necessary to increase the operating temperature of lasers.Methods. To calculate electron transport in THz QCLs, we used a system of balance equations based on wave functions with reduced dipole moments of tunnel-bound states.Results. As a result of the calculations, an original band design with a period based on three GaAs/Al0.18Ga0.82As quantum wells (QWs) and a gain maximum at about 3.3 THz was proposed. Based on the developed design, a THz QCL was fabricated, including the growth of a laser structure by molecular beam epitaxy, postgrowth processing to form strip lasers with a double metal waveguide, as well as an assembly of lasers mounted on a heat sink. The developed THz QCLs was capable of lasing at temperatures of up to 125 K as predicted by the performed calculations. We also studied band designs based on two GaAs/AlxGa1–xAs QWs having varying aluminum contents in the barrier layers (x = 0.20, 0.25, and 0.30).Conclusions. The calculated temperature dependences of the peak gain for two-QW designs with x > 0.2 confirm the possibility of creating THz QCLs operating at temperatures above 200 K. Thus, we have proposed two-QW band designs that outperform existing high-temperature designs in terms of maximum operating temperature.https://www.rtj-mirea.ru/jour/article/view/521quantum cascade laserterahertz rangequantum wellmolecular beam epitaxy
spellingShingle D. V. Ushakov
A. A. Afonenko
I. A. Glinskiy
R. A. Khabibullin
High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
Российский технологический журнал
quantum cascade laser
terahertz range
quantum well
molecular beam epitaxy
title High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
title_full High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
title_fullStr High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
title_full_unstemmed High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
title_short High-temperature terahertz quantum-cascade lasers: design optimization and experimental results
title_sort high temperature terahertz quantum cascade lasers design optimization and experimental results
topic quantum cascade laser
terahertz range
quantum well
molecular beam epitaxy
url https://www.rtj-mirea.ru/jour/article/view/521
work_keys_str_mv AT dvushakov hightemperatureterahertzquantumcascadelasersdesignoptimizationandexperimentalresults
AT aaafonenko hightemperatureterahertzquantumcascadelasersdesignoptimizationandexperimentalresults
AT iaglinskiy hightemperatureterahertzquantumcascadelasersdesignoptimizationandexperimentalresults
AT rakhabibullin hightemperatureterahertzquantumcascadelasersdesignoptimizationandexperimentalresults