The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide
We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH<sub>4</sub> in H<sub>2</sub> at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase depos...
Saved in:
| Main Authors: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/13/7078 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850118873177653248 |
|---|---|
| author | Teodor Milenov Vladimir Mehandzhiev Peter Rafailov Ivalina Avramova Ivan Zahariev Georgi Avdeev Daniela Karashanova Biliana Georgieva Penka Terziyska Kiril Kirilov Blagoy Blagoev Stefan Kolev Dimitar Dimov Dobromir Kalchevski Desislava Karaivanova Valentin Popov |
| author_facet | Teodor Milenov Vladimir Mehandzhiev Peter Rafailov Ivalina Avramova Ivan Zahariev Georgi Avdeev Daniela Karashanova Biliana Georgieva Penka Terziyska Kiril Kirilov Blagoy Blagoev Stefan Kolev Dimitar Dimov Dobromir Kalchevski Desislava Karaivanova Valentin Popov |
| author_sort | Teodor Milenov |
| collection | DOAJ |
| description | We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH<sub>4</sub> in H<sub>2</sub> at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase deposition times of 3, 5, 20, 60, and 90 min on Si(111) with or without native oxide, following established protocols. Our studies show that either predominantly crystalline SiC or a mixture of SiC and Si–O/Si–O–C glass forms on Si substrates significantly doped with carbon and oxygen, depending on the presence or absence of native oxide. The thickness of the SiC film ranges from approximately 5–6 nm for films synthesized in 3 min to over 15 nm for those synthesized in 90 min, while the size of the crystal grains varies from a few to 110 nm depending on the synthesis duration. The findings suggest that the complex composition of the thin films and the region beneath them can more effectively compensate for the differences in lattice parameters and thermal expansion coefficients between the SiC film and the Si substrate; thus, this method is promising for depositing intermediate thin films of SiC on Si substrates. |
| format | Article |
| id | doaj-art-e1e7a87f78f640119ec3846542c947ba |
| institution | OA Journals |
| issn | 2076-3417 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj-art-e1e7a87f78f640119ec3846542c947ba2025-08-20T02:35:46ZengMDPI AGApplied Sciences2076-34172025-06-011513707810.3390/app15137078The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon OxideTeodor Milenov0Vladimir Mehandzhiev1Peter Rafailov2Ivalina Avramova3Ivan Zahariev4Georgi Avdeev5Daniela Karashanova6Biliana Georgieva7Penka Terziyska8Kiril Kirilov9Blagoy Blagoev10Stefan Kolev11Dimitar Dimov12Dobromir Kalchevski13Desislava Karaivanova14Valentin Popov15“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“G. Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“G. Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, BulgariaInstitute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, “Acad. Georgi Bonchev” Str. bld.11, 1113 Sofia, BulgariaInstitute of Physical Chemistry “Rostislaw Kaishev”, Bulgarian Academy of Sciences, “Acad. Georgi Bonchev” Str. bld.11, 1113 Sofia, BulgariaInstitute of Physical Chemistry “Rostislaw Kaishev”, Bulgarian Academy of Sciences, “Acad. Georgi Bonchev” Str. bld.11, 1113 Sofia, BulgariaInstitute of Optical Materials and Technologies “Acad. Jordan Malinowski”, Bulgarian Academy of Sciences, 109, Acad. G. Bontchev Str., 1113 Sofia, BulgariaInstitute of Optical Materials and Technologies “Acad. Jordan Malinowski”, Bulgarian Academy of Sciences, 109, Acad. G. Bontchev Str., 1113 Sofia, Bulgaria“G. Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, BulgariaFaculty of Physics, Sofia University “St. Kliment Ohridski”, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria“G. Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, BulgariaFaculty of Physics, Sofia University “St. Kliment Ohridski”, 5 James Bourchier Blvd., 1164 Sofia, BulgariaWe present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH<sub>4</sub> in H<sub>2</sub> at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase deposition times of 3, 5, 20, 60, and 90 min on Si(111) with or without native oxide, following established protocols. Our studies show that either predominantly crystalline SiC or a mixture of SiC and Si–O/Si–O–C glass forms on Si substrates significantly doped with carbon and oxygen, depending on the presence or absence of native oxide. The thickness of the SiC film ranges from approximately 5–6 nm for films synthesized in 3 min to over 15 nm for those synthesized in 90 min, while the size of the crystal grains varies from a few to 110 nm depending on the synthesis duration. The findings suggest that the complex composition of the thin films and the region beneath them can more effectively compensate for the differences in lattice parameters and thermal expansion coefficients between the SiC film and the Si substrate; thus, this method is promising for depositing intermediate thin films of SiC on Si substrates.https://www.mdpi.com/2076-3417/15/13/7078silicon carbidechemical vapor depositionX-ray diffractionX-ray photoelectron spectroscopytransmission electron microscopy |
| spellingShingle | Teodor Milenov Vladimir Mehandzhiev Peter Rafailov Ivalina Avramova Ivan Zahariev Georgi Avdeev Daniela Karashanova Biliana Georgieva Penka Terziyska Kiril Kirilov Blagoy Blagoev Stefan Kolev Dimitar Dimov Dobromir Kalchevski Desislava Karaivanova Valentin Popov The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide Applied Sciences silicon carbide chemical vapor deposition X-ray diffraction X-ray photoelectron spectroscopy transmission electron microscopy |
| title | The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide |
| title_full | The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide |
| title_fullStr | The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide |
| title_full_unstemmed | The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide |
| title_short | The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide |
| title_sort | study of the synthesis of sic by the carbonization of si 111 substrates the role of native silicon oxide |
| topic | silicon carbide chemical vapor deposition X-ray diffraction X-ray photoelectron spectroscopy transmission electron microscopy |
| url | https://www.mdpi.com/2076-3417/15/13/7078 |
| work_keys_str_mv | AT teodormilenov thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT vladimirmehandzhiev thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT peterrafailov thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT ivalinaavramova thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT ivanzahariev thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT georgiavdeev thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT danielakarashanova thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT bilianageorgieva thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT penkaterziyska thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT kirilkirilov thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT blagoyblagoev thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT stefankolev thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT dimitardimov thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT dobromirkalchevski thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT desislavakaraivanova thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT valentinpopov thestudyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT teodormilenov studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT vladimirmehandzhiev studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT peterrafailov studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT ivalinaavramova studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT ivanzahariev studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT georgiavdeev studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT danielakarashanova studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT bilianageorgieva studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT penkaterziyska studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT kirilkirilov studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT blagoyblagoev studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT stefankolev studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT dimitardimov studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT dobromirkalchevski studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT desislavakaraivanova studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide AT valentinpopov studyofthesynthesisofsicbythecarbonizationofsi111substratestheroleofnativesiliconoxide |