Model of Reversible Breakdown in HfO2 Based on Fractal Patterns

We propose a model of the kinetics of reversible breakdown in metal-insulator-metal structures with afnia based on the growth of fractal patterns of defects when the insulator is subject to an external voltage. The probability that a defect is (or is not) generated and the position where it is gener...

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Main Authors: P. Lorenzi, R. Rao, G. Romano, F. Irrera
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2015/136938
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author P. Lorenzi
R. Rao
G. Romano
F. Irrera
author_facet P. Lorenzi
R. Rao
G. Romano
F. Irrera
author_sort P. Lorenzi
collection DOAJ
description We propose a model of the kinetics of reversible breakdown in metal-insulator-metal structures with afnia based on the growth of fractal patterns of defects when the insulator is subject to an external voltage. The probability that a defect is (or is not) generated and the position where it is generated depend on the electric field distribution. The new defect moves accordingly to fractal rules and attach to another defect in a tree branch. When the two electrodes sandwiching the insulating film are connected a conductive filament is formed and the breakdown takes place. The model is calibrated with experiments inducing metastable soft breakdown events in Pt/HfO2/Pt capacitors.
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spelling doaj-art-e1d0b055dc56455c9032010bf49da46a2025-08-20T02:21:38ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/136938136938Model of Reversible Breakdown in HfO2 Based on Fractal PatternsP. Lorenzi0R. Rao1G. Romano2F. Irrera3Department of Information Engineering, Electronics and Communications, Sapienza University of Rome, Via Eudossiana 18, 00184 Rome, ItalyDepartment of Information Engineering, Electronics and Communications, Sapienza University of Rome, Via Eudossiana 18, 00184 Rome, ItalyDepartment of Information Engineering, Electronics and Communications, Sapienza University of Rome, Via Eudossiana 18, 00184 Rome, ItalyDepartment of Information Engineering, Electronics and Communications, Sapienza University of Rome, Via Eudossiana 18, 00184 Rome, ItalyWe propose a model of the kinetics of reversible breakdown in metal-insulator-metal structures with afnia based on the growth of fractal patterns of defects when the insulator is subject to an external voltage. The probability that a defect is (or is not) generated and the position where it is generated depend on the electric field distribution. The new defect moves accordingly to fractal rules and attach to another defect in a tree branch. When the two electrodes sandwiching the insulating film are connected a conductive filament is formed and the breakdown takes place. The model is calibrated with experiments inducing metastable soft breakdown events in Pt/HfO2/Pt capacitors.http://dx.doi.org/10.1155/2015/136938
spellingShingle P. Lorenzi
R. Rao
G. Romano
F. Irrera
Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
Advances in Condensed Matter Physics
title Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
title_full Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
title_fullStr Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
title_full_unstemmed Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
title_short Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
title_sort model of reversible breakdown in hfo2 based on fractal patterns
url http://dx.doi.org/10.1155/2015/136938
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AT gromano modelofreversiblebreakdowninhfo2basedonfractalpatterns
AT firrera modelofreversiblebreakdowninhfo2basedonfractalpatterns