Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient research on the effects of space irradiation. Th...

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Bibliographic Details
Main Authors: Yan Ren, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu, Yongli Lou, Yiqiang Ni
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
GaN-based THz SBDs
heavy ions irradiation
trap states
low-frequency noise
photoluminescence
Online Access:https://www.mdpi.com/2072-666X/16/3/288
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