Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient research on the effects of space irradiation. Th...
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MDPI AG
2025-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/3/288 |
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| author | Yan Ren Yongtao Yu Shengze Zhou Chao Pang Yinle Li Zhifeng Lei Hong Zhang Zhihong Feng Xubo Song Honghui Liu Yongli Lou Yiqiang Ni |
| author_facet | Yan Ren Yongtao Yu Shengze Zhou Chao Pang Yinle Li Zhifeng Lei Hong Zhang Zhihong Feng Xubo Song Honghui Liu Yongli Lou Yiqiang Ni |
| author_sort | Yan Ren |
| collection | DOAJ |
| description | GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient research on the effects of space irradiation. This work investigates the effects of 450 MeV Kr swift heavy ion (SHI) irradiation on the electrical characteristics and induced defects in GaN-based THz SBDs. It was found that the high-frequency performance of GaN-based THz SBDs is highly sensitive to Kr SHI irradiation, which can be attributed to defects induced in the GaN epitaxial layer by the irradiation. Low-frequency noise analysis reveals trap states located at an energy level of approximately 0.62 eV below the conduction band. Moreover, the results from SRIM calculation and photoluminescence spectra confirmed the presence of irradiation-induced defects caused by Kr SHI irradiation. |
| format | Article |
| id | doaj-art-e178c086faf64108b7616ecbd45c90cd |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-e178c086faf64108b7616ecbd45c90cd2025-08-20T02:42:22ZengMDPI AGMicromachines2072-666X2025-02-0116328810.3390/mi16030288Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier DiodesYan Ren0Yongtao Yu1Shengze Zhou2Chao Pang3Yinle Li4Zhifeng Lei5Hong Zhang6Zhihong Feng7Xubo Song8Honghui Liu9Yongli Lou10Yiqiang Ni11School of Reliability and Systems Engineering, Beihang University, Beijing 100191, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaNational Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, ChinaNational Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou 510640, ChinaGaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient research on the effects of space irradiation. This work investigates the effects of 450 MeV Kr swift heavy ion (SHI) irradiation on the electrical characteristics and induced defects in GaN-based THz SBDs. It was found that the high-frequency performance of GaN-based THz SBDs is highly sensitive to Kr SHI irradiation, which can be attributed to defects induced in the GaN epitaxial layer by the irradiation. Low-frequency noise analysis reveals trap states located at an energy level of approximately 0.62 eV below the conduction band. Moreover, the results from SRIM calculation and photoluminescence spectra confirmed the presence of irradiation-induced defects caused by Kr SHI irradiation.https://www.mdpi.com/2072-666X/16/3/288GaN-based THz SBDsheavy ions irradiationtrap stateslow-frequency noisephotoluminescence |
| spellingShingle | Yan Ren Yongtao Yu Shengze Zhou Chao Pang Yinle Li Zhifeng Lei Hong Zhang Zhihong Feng Xubo Song Honghui Liu Yongli Lou Yiqiang Ni Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes Micromachines GaN-based THz SBDs heavy ions irradiation trap states low-frequency noise photoluminescence |
| title | Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes |
| title_full | Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes |
| title_fullStr | Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes |
| title_full_unstemmed | Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes |
| title_short | Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes |
| title_sort | effects of 450 mev kr swift heavy ion irradiation on gan based terahertz schottky barrier diodes |
| topic | GaN-based THz SBDs heavy ions irradiation trap states low-frequency noise photoluminescence |
| url | https://www.mdpi.com/2072-666X/16/3/288 |
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