A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions
An analytical 2D model to predict the potential distribution of short-channel ion-implanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation in conjunction with suitable boundary condition...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1%28Part5%29_0868-0877.pdf |
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| author | Shweta Tripathi S. Jit |
| author_facet | Shweta Tripathi S. Jit |
| author_sort | Shweta Tripathi |
| collection | DOAJ |
| description | An analytical 2D model to predict the potential distribution of short-channel ion-implanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation in conjunction with suitable boundary conditions using superposition method. The remarkable feature of the proposed model is that the implanted doping profile has been treated in completely analytical manner. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson’s equation to study the optical effects on the device. The photovoltage developed across the gate metal has also been modeled. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available ATLASTM2D device simulator. |
| format | Article |
| id | doaj-art-e12ab8d49b884f8ca13efe0da3e07eef |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-e12ab8d49b884f8ca13efe0da3e07eef2025-08-20T03:26:00ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131868877A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated ConditionsShweta TripathiS. JitAn analytical 2D model to predict the potential distribution of short-channel ion-implanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation in conjunction with suitable boundary conditions using superposition method. The remarkable feature of the proposed model is that the implanted doping profile has been treated in completely analytical manner. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson’s equation to study the optical effects on the device. The photovoltage developed across the gate metal has also been modeled. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available ATLASTM2D device simulator.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1%28Part5%29_0868-0877.pdfShort channel GaAs MESFETIon-implantationOptical biasingPoisson’s equationPhotovoltage |
| spellingShingle | Shweta Tripathi S. Jit A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions Журнал нано- та електронної фізики Short channel GaAs MESFET Ion-implantation Optical biasing Poisson’s equation Photovoltage |
| title | A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions |
| title_full | A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions |
| title_fullStr | A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions |
| title_full_unstemmed | A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions |
| title_short | A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions |
| title_sort | two dimensional 2d potential distribution model for the short gate length ion implanted gaas mesfets under dark and illuminated conditions |
| topic | Short channel GaAs MESFET Ion-implantation Optical biasing Poisson’s equation Photovoltage |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1%28Part5%29_0868-0877.pdf |
| work_keys_str_mv | AT shwetatripathi atwodimensional2dpotentialdistributionmodelfortheshortgatelengthionimplantedgaasmesfetsunderdarkandilluminatedconditions AT sjit atwodimensional2dpotentialdistributionmodelfortheshortgatelengthionimplantedgaasmesfetsunderdarkandilluminatedconditions AT shwetatripathi twodimensional2dpotentialdistributionmodelfortheshortgatelengthionimplantedgaasmesfetsunderdarkandilluminatedconditions AT sjit twodimensional2dpotentialdistributionmodelfortheshortgatelengthionimplantedgaasmesfetsunderdarkandilluminatedconditions |