Integrated TE optical isolator based on magneto-optical perturbation in coupled waveguides
Abstract Photonic integrated circuits (PICs) increasingly require more advanced integrated functionalities and devices to meet the key application challenges. This evolution with the serial integration of optical functions in the same photonic circuit often results in internal reflections and optica...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-08507-z |
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| Summary: | Abstract Photonic integrated circuits (PICs) increasingly require more advanced integrated functionalities and devices to meet the key application challenges. This evolution with the serial integration of optical functions in the same photonic circuit often results in internal reflections and optical feedback, which can specifically destabilize lasers. One solution to overcome this issue is to integrate an optical isolator at the output of the lasers. Among various proposed designs, magneto-optical-based isolators have significantly improved over the past decades in terms of compactness, insertion loss, isolation ratio, and spectral isolation bandwidth. Despite these improvements, the TE optical isolator still lacks performance. This paper introduces a new operational principle for a TE optical isolator based on modal beating in a transverse magneto-optical Kerr effect (TMOKE) coupled-waveguide system. This approach combines evanescent-coupled silicon waveguides and the magneto-optical effect, resulting in a nonreciprocal propagation that can be optimized for optical isolation. This new concept shows promise in achieving a high-performing TE optical isolator, as it does not depend on resonance and is free from constraints associated with interferometers. Based on data from magneto-optical garnet materials, the simulated device has a length of 500 $$\upmu \textrm{m}$$ and its 20 dB-isolation bandwidth is as high as 35 nm. With broadband and high isolation, this simulated device opens possibilities for miniaturizing complex photonic circuits used in optical communication, data communication, and optical sensing. |
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| ISSN: | 2045-2322 |