Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells
The influence of HF solution etching on surface roughness of c-Si wafer was investigated using AFM. Ultra thin(2-3 nm) intrinsic a-Si:H is necessary to achieve high VOC and Fill factor, as it effectively passivates the defects on the surface of c-Si and increase tunneling probability of minority cha...
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1120-1126.pdf |
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| author | Shahaji More R.O. Dusane |
| author_facet | Shahaji More R.O. Dusane |
| author_sort | Shahaji More |
| collection | DOAJ |
| description | The influence of HF solution etching on surface roughness of c-Si wafer was investigated using AFM. Ultra thin(2-3 nm) intrinsic a-Si:H is necessary to achieve high VOC and Fill factor, as it effectively passivates the defects on the surface of c-Si and increase tunneling probability of minority charge carriers. However, to achieve control over ultra-thin intrinsic a-Si:H layer thickness and passivation properties, the films were deposited by Hot-wire CVD. We used tantalum filament and silane (SiH4) as a precursor gas, where as the deposition parameter such as filament temperature temperature was varied. The deposition rate, Dark and Photoconductivity were measured for all the films. The optimized intrinsic a-Si:H layer was inserted between p typed doped layers and n type c-Si wafers to fabricate HIT solar cells. The Current-Voltage characteristics were studied to understand the passivation effect of intrinsic layer on c-Si surface. The high saturation current density (Jsat > 10–7 A/cm2) and Ideality factor (n > 2) were observed. We achieved the efficiency of 3.28 % with the optimized intrinsic and doped a-Si:H layers using HWCVD technique. |
| format | Article |
| id | doaj-art-e11ff7cf9f534832b62a96513e48fc89 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-e11ff7cf9f534832b62a96513e48fc892025-08-20T02:03:55ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-013111201126Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar CellsShahaji MoreR.O. DusaneThe influence of HF solution etching on surface roughness of c-Si wafer was investigated using AFM. Ultra thin(2-3 nm) intrinsic a-Si:H is necessary to achieve high VOC and Fill factor, as it effectively passivates the defects on the surface of c-Si and increase tunneling probability of minority charge carriers. However, to achieve control over ultra-thin intrinsic a-Si:H layer thickness and passivation properties, the films were deposited by Hot-wire CVD. We used tantalum filament and silane (SiH4) as a precursor gas, where as the deposition parameter such as filament temperature temperature was varied. The deposition rate, Dark and Photoconductivity were measured for all the films. The optimized intrinsic a-Si:H layer was inserted between p typed doped layers and n type c-Si wafers to fabricate HIT solar cells. The Current-Voltage characteristics were studied to understand the passivation effect of intrinsic layer on c-Si surface. The high saturation current density (Jsat > 10–7 A/cm2) and Ideality factor (n > 2) were observed. We achieved the efficiency of 3.28 % with the optimized intrinsic and doped a-Si:H layers using HWCVD technique.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1120-1126.pdfHIT solar cellHWCVDAFMHFAmorphous silicon. |
| spellingShingle | Shahaji More R.O. Dusane Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells Журнал нано- та електронної фізики HIT solar cell HWCVD AFM HF Amorphous silicon. |
| title | Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells |
| title_full | Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells |
| title_fullStr | Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells |
| title_full_unstemmed | Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells |
| title_short | Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells |
| title_sort | effective passivation of c si by intrinsic a si h layer for hit solar cells |
| topic | HIT solar cell HWCVD AFM HF Amorphous silicon. |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1120-1126.pdf |
| work_keys_str_mv | AT shahajimore effectivepassivationofcsibyintrinsicasihlayerforhitsolarcells AT rodusane effectivepassivationofcsibyintrinsicasihlayerforhitsolarcells |