High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity
We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg ref...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9260967/ |
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