High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity
We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg ref...
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IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9260967/ |
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| author | Dave Kharas Jason J. Plant William Loh Reuel B. Swint Suraj Bramhavar Christopher Heidelberger Siva Yegnanarayanan Paul W. Juodawlkis |
| author_facet | Dave Kharas Jason J. Plant William Loh Reuel B. Swint Suraj Bramhavar Christopher Heidelberger Siva Yegnanarayanan Paul W. Juodawlkis |
| author_sort | Dave Kharas |
| collection | DOAJ |
| description | We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg reflector (DBR) grating. The combined chip-scale SCOW external cavity laser (SCOWECL) has single mode emission with 312 mW of optical power at a drive current of 2.5 A, and exhibits a side mode suppression ratio (SMSR) of 55 dB, peak photon conversion efficiency (PCE) of 10%, low relative-intensity noise (RIN) of ∼160 dB/Hz, and an integrated linewidth of 192 kHz. Additionally, we demonstrate a multi-wavelength SCOWECL array comprised of four SCOWAs coupled to SiN-waveguide DBR gratings. The four-element array generates 80 mW per channel when the SCOWAs are driven in parallel (1.25 A/channel) with ∼1-nm wavelength spacing centered at 1533 nm. We describe the fabrication and hybrid integration processes. The measured SCOWA-to-waveguide coupling loss is estimated to be 1.6 +/−1.0 dB which agrees well with the simulation. |
| format | Article |
| id | doaj-art-e0fc32f4191a4a1799d3a1151bc6e58d |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-e0fc32f4191a4a1799d3a1151bc6e58d2025-08-20T03:33:14ZengIEEEIEEE Photonics Journal1943-06552020-01-0112611210.1109/JPHOT.2020.30378349260967High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR CavityDave Kharas0https://orcid.org/0000-0001-7635-8234Jason J. Plant1William Loh2https://orcid.org/0000-0003-1912-6095Reuel B. Swint3Suraj Bramhavar4Christopher Heidelberger5Siva Yegnanarayanan6Paul W. Juodawlkis7https://orcid.org/0000-0003-1321-043XMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAMassachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USAWe demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg reflector (DBR) grating. The combined chip-scale SCOW external cavity laser (SCOWECL) has single mode emission with 312 mW of optical power at a drive current of 2.5 A, and exhibits a side mode suppression ratio (SMSR) of 55 dB, peak photon conversion efficiency (PCE) of 10%, low relative-intensity noise (RIN) of ∼160 dB/Hz, and an integrated linewidth of 192 kHz. Additionally, we demonstrate a multi-wavelength SCOWECL array comprised of four SCOWAs coupled to SiN-waveguide DBR gratings. The four-element array generates 80 mW per channel when the SCOWAs are driven in parallel (1.25 A/channel) with ∼1-nm wavelength spacing centered at 1533 nm. We describe the fabrication and hybrid integration processes. The measured SCOWA-to-waveguide coupling loss is estimated to be 1.6 +/−1.0 dB which agrees well with the simulation.https://ieeexplore.ieee.org/document/9260967/Hybrid integrationSiN photonicsexternal cavity laserhigh power laser |
| spellingShingle | Dave Kharas Jason J. Plant William Loh Reuel B. Swint Suraj Bramhavar Christopher Heidelberger Siva Yegnanarayanan Paul W. Juodawlkis High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity IEEE Photonics Journal Hybrid integration SiN photonics external cavity laser high power laser |
| title | High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity |
| title_full | High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity |
| title_fullStr | High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity |
| title_full_unstemmed | High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity |
| title_short | High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity |
| title_sort | high power gt 300 mw on chip laser with passively aligned silicon nitride waveguide dbr cavity |
| topic | Hybrid integration SiN photonics external cavity laser high power laser |
| url | https://ieeexplore.ieee.org/document/9260967/ |
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