Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films
Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Us...
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Pontificia Universidad Javeriana
2014-03-01
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| Series: | Universitas Scientiarum |
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| Online Access: | http://revistas.javeriana.edu.co/index.php/scientarium/article/view/8388/7407 |
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| author | F. Mesa A. Dussan B. A. Paez-Sierra H. Rodriguez-Hernandez |
| author_facet | F. Mesa A. Dussan B. A. Paez-Sierra H. Rodriguez-Hernandez |
| author_sort | F. Mesa |
| collection | DOAJ |
| description | Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2 V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound. |
| format | Article |
| id | doaj-art-e0f66e1aa19346b2bca7764a8fce0c46 |
| institution | OA Journals |
| issn | 0122-7483 2027-1352 |
| language | English |
| publishDate | 2014-03-01 |
| publisher | Pontificia Universidad Javeriana |
| record_format | Article |
| series | Universitas Scientiarum |
| spelling | doaj-art-e0f66e1aa19346b2bca7764a8fce0c462025-08-20T02:03:57ZengPontificia Universidad JaverianaUniversitas Scientiarum0122-74832027-13522014-03-011919910510.11144/Javeriana.SC19-2.ehefHall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin filmsF. Mesa0A. Dussan1B. A. Paez-Sierra2H. Rodriguez-Hernandez3 Unidad de Estudios Universitarios, Universidad del Rosario, Bogotá, ColombiaPhysics Department, Nanostructured Materials Group, Universidad Nacional de Colombia, Bogotá, ColombiaThin films and Nanophotonics Group, Pontificia Universidad Javeriana, Bogotá, Colombia.Thin films and Nanophotonics Group, Pontificia Universidad Javeriana, Bogotá, Colombia.Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2 V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.http://revistas.javeriana.edu.co/index.php/scientarium/article/view/8388/7407Electric transportCu3BiS3transient surface photovoltagedefects |
| spellingShingle | F. Mesa A. Dussan B. A. Paez-Sierra H. Rodriguez-Hernandez Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films Universitas Scientiarum Electric transport Cu3BiS3 transient surface photovoltage defects |
| title | Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films |
| title_full | Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films |
| title_fullStr | Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films |
| title_full_unstemmed | Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films |
| title_short | Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films |
| title_sort | hall effect and transient surface photovoltage spv study of cu3bis3 thin films |
| topic | Electric transport Cu3BiS3 transient surface photovoltage defects |
| url | http://revistas.javeriana.edu.co/index.php/scientarium/article/view/8388/7407 |
| work_keys_str_mv | AT fmesa halleffectandtransientsurfacephotovoltagespvstudyofcu3bis3thinfilms AT adussan halleffectandtransientsurfacephotovoltagespvstudyofcu3bis3thinfilms AT bapaezsierra halleffectandtransientsurfacephotovoltagespvstudyofcu3bis3thinfilms AT hrodriguezhernandez halleffectandtransientsurfacephotovoltagespvstudyofcu3bis3thinfilms |