Enhanced dielectric properties and band gap expansion in NiO submicron powders via substitutional be doping
The fundamental tradeoff has made it difficult to enhance the low permittivity of wide bandgap semiconductors without sacrificing the bandgap. In this work we demonstrate that high-concentration substitutional Be doping can enhance NiO’s dielectric properties and simultaneously widen the bandgap. Up...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ad95e4 |
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