Enhanced dielectric properties and band gap expansion in NiO submicron powders via substitutional be doping

Enhanced dielectric properties and band gap expansion in NiO submicron powders via substitutional be doping

The fundamental tradeoff has made it difficult to enhance the low permittivity of wide bandgap semiconductors without sacrificing the bandgap. In this work we demonstrate that high-concentration substitutional Be doping can enhance NiO’s dielectric properties and simultaneously widen the bandgap. Up...

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Bibliographic Details
Main Authors: Dongpyo Hong, Gyung Hyun Kim, Eun Jung Lee, Young Il Moon, Ok Sung Jeon, Se Hun Lee, Sang-Hwa Lee, Young Jun Yoo, Sang Yoon Park
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials Research Express
Subjects:
nickel oxide
beryllium oxide
doping
dielectric properties
bandgap
Online Access:https://doi.org/10.1088/2053-1591/ad95e4
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https://doi.org/10.1088/2053-1591/ad95e4

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