Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses
Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-12-01
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| Series: | Results in Optics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666950124001524 |
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| author | In Jae Lee Dae Hee Kim Jiwon Hahm Hongki Yoo Seung-Woo Kim Young-Jin Kim |
| author_facet | In Jae Lee Dae Hee Kim Jiwon Hahm Hongki Yoo Seung-Woo Kim Young-Jin Kim |
| author_sort | In Jae Lee |
| collection | DOAJ |
| description | Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision, non-destructive thickness measurement method based on surface-sensitive optical third-harmonic generation at both sides of Si wafers. We irradiated a highly stabilized near-infrared femtosecond pulse laser with a broad spectrum and central wavelength of 1550 nm on the Si wafers, which are non-transparent in the visible to ultraviolet wavelength range. Using the proposed system, the thickness of the certified reference wafer was measured, yielding results that fall within the certified uncertainty. |
| format | Article |
| id | doaj-art-e0ababd58fce4615b2d153eacc628511 |
| institution | DOAJ |
| issn | 2666-9501 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Optics |
| spelling | doaj-art-e0ababd58fce4615b2d153eacc6285112025-08-20T02:50:05ZengElsevierResults in Optics2666-95012024-12-011710075510.1016/j.rio.2024.100755Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulsesIn Jae Lee0Dae Hee Kim1Jiwon Hahm2Hongki Yoo3Seung-Woo Kim4Young-Jin Kim5Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of KoreaDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of KoreaDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of KoreaDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of KoreaDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of KoreaDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, Republic of Korea; Corresponding authors.Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision, non-destructive thickness measurement method based on surface-sensitive optical third-harmonic generation at both sides of Si wafers. We irradiated a highly stabilized near-infrared femtosecond pulse laser with a broad spectrum and central wavelength of 1550 nm on the Si wafers, which are non-transparent in the visible to ultraviolet wavelength range. Using the proposed system, the thickness of the certified reference wafer was measured, yielding results that fall within the certified uncertainty.http://www.sciencedirect.com/science/article/pii/S2666950124001524Thickness measurementSi waferThird-harmonic generationNear-infrared femtosecond pulse laser |
| spellingShingle | In Jae Lee Dae Hee Kim Jiwon Hahm Hongki Yoo Seung-Woo Kim Young-Jin Kim Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses Results in Optics Thickness measurement Si wafer Third-harmonic generation Near-infrared femtosecond pulse laser |
| title | Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses |
| title_full | Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses |
| title_fullStr | Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses |
| title_full_unstemmed | Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses |
| title_short | Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses |
| title_sort | non destructive thickness measurement of si wafers via optical third harmonic generation with femtosecond laser pulses |
| topic | Thickness measurement Si wafer Third-harmonic generation Near-infrared femtosecond pulse laser |
| url | http://www.sciencedirect.com/science/article/pii/S2666950124001524 |
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