Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses
Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Optics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666950124001524 |
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| Summary: | Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision, non-destructive thickness measurement method based on surface-sensitive optical third-harmonic generation at both sides of Si wafers. We irradiated a highly stabilized near-infrared femtosecond pulse laser with a broad spectrum and central wavelength of 1550 nm on the Si wafers, which are non-transparent in the visible to ultraviolet wavelength range. Using the proposed system, the thickness of the certified reference wafer was measured, yielding results that fall within the certified uncertainty. |
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| ISSN: | 2666-9501 |