Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays
Abstract In the current work, the effect of the surface phase structure of silicon wafer on the copper assisted chemical etching (Cu-ACE) behavior was investigated by adopting N-type monocrystal silicon with different thickness as raw material. An inverted pyramid structure was prepared with the met...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2024-11-01
|
| Series: | Materials for Renewable and Sustainable Energy |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40243-024-00277-4 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849311071080284160 |
|---|---|
| author | YuXin Zou Xuan Liu Mingjun Wang Yating Song Huan Liu Shihao Hong Fengshuo Xi |
| author_facet | YuXin Zou Xuan Liu Mingjun Wang Yating Song Huan Liu Shihao Hong Fengshuo Xi |
| author_sort | YuXin Zou |
| collection | DOAJ |
| description | Abstract In the current work, the effect of the surface phase structure of silicon wafer on the copper assisted chemical etching (Cu-ACE) behavior was investigated by adopting N-type monocrystal silicon with different thickness as raw material. An inverted pyramid structure was prepared with the method of Cu-ACE, which exhibited a mild reaction temperature with the reflectance reaching as low as 6.34%. Furthermore, cetyltrimethylammonium bromide (CTAB) was employed as an additive to optimize the Cu-ACE process. The study revealed that CTAB molecules could adsorb Cu2+ near the silicon wafer surface in the HF/Cu(NO3)2/H2O2 solution, thereby promoting the deposition of copper particles and ensuring a uniform etching reaction. When 3 mg of CTAB was added to 100 mL of etching solution, the inverted pyramid structure showed larger dimensions and was more uniformly distributed, an excellent antireflection effect was achieved with the reflectance significantly reduced from 10.8% to 4.6%. This process could stably fabricate inverted pyramid structures, and is expected to advance the development of high-efficiency single-crystal solar cells in the future. |
| format | Article |
| id | doaj-art-e04c67313c614092a09a46614aa564f3 |
| institution | Kabale University |
| issn | 2194-1459 2194-1467 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Materials for Renewable and Sustainable Energy |
| spelling | doaj-art-e04c67313c614092a09a46614aa564f32025-08-20T03:53:32ZengSpringerOpenMaterials for Renewable and Sustainable Energy2194-14592194-14672024-11-011411910.1007/s40243-024-00277-4Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arraysYuXin Zou0Xuan Liu1Mingjun Wang2Yating Song3Huan Liu4Shihao Hong5Fengshuo Xi6Xiangtan Institute of TechnologyXiangtan Institute of TechnologyXiangtan Institute of TechnologyXiangtan Institute of TechnologyXiangtan Institute of TechnologyBYD New Material DivisionFaculty of Metallurgical and Energy Engineering, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and TechnologyAbstract In the current work, the effect of the surface phase structure of silicon wafer on the copper assisted chemical etching (Cu-ACE) behavior was investigated by adopting N-type monocrystal silicon with different thickness as raw material. An inverted pyramid structure was prepared with the method of Cu-ACE, which exhibited a mild reaction temperature with the reflectance reaching as low as 6.34%. Furthermore, cetyltrimethylammonium bromide (CTAB) was employed as an additive to optimize the Cu-ACE process. The study revealed that CTAB molecules could adsorb Cu2+ near the silicon wafer surface in the HF/Cu(NO3)2/H2O2 solution, thereby promoting the deposition of copper particles and ensuring a uniform etching reaction. When 3 mg of CTAB was added to 100 mL of etching solution, the inverted pyramid structure showed larger dimensions and was more uniformly distributed, an excellent antireflection effect was achieved with the reflectance significantly reduced from 10.8% to 4.6%. This process could stably fabricate inverted pyramid structures, and is expected to advance the development of high-efficiency single-crystal solar cells in the future.https://doi.org/10.1007/s40243-024-00277-4DWS N-type silicon waferCopper assisted chemical etchingInverted pyramid texturingUltra-low reflectivitySolar Cell |
| spellingShingle | YuXin Zou Xuan Liu Mingjun Wang Yating Song Huan Liu Shihao Hong Fengshuo Xi Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays Materials for Renewable and Sustainable Energy DWS N-type silicon wafer Copper assisted chemical etching Inverted pyramid texturing Ultra-low reflectivity Solar Cell |
| title | Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays |
| title_full | Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays |
| title_fullStr | Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays |
| title_full_unstemmed | Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays |
| title_short | Study on the stable preparation and optimization treatment of DWS N-type single-crystal silicon pyramid arrays |
| title_sort | study on the stable preparation and optimization treatment of dws n type single crystal silicon pyramid arrays |
| topic | DWS N-type silicon wafer Copper assisted chemical etching Inverted pyramid texturing Ultra-low reflectivity Solar Cell |
| url | https://doi.org/10.1007/s40243-024-00277-4 |
| work_keys_str_mv | AT yuxinzou studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT xuanliu studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT mingjunwang studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT yatingsong studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT huanliu studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT shihaohong studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays AT fengshuoxi studyonthestablepreparationandoptimizationtreatmentofdwsntypesinglecrystalsiliconpyramidarrays |