On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters
Featured with light emission and detection coexistence phenomenon, nitride-based multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, m...
Saved in:
| Main Authors: | Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
|
| Series: | Chip |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2709472324000339 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
by: Jongil Kim, et al.
Published: (2025-05-01) -
On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
by: Zi-Hui Zhang, et al.
Published: (2016-01-01) -
Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023-03-01) -
High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
by: Zhiheng Quan, et al.
Published: (2016-01-01) -
Three-Dimensional Numerical Study on the Efficiency Droop in InGaN/GaN Light-Emitting Diodes
by: Quoc-Hung Pham, et al.
Published: (2019-01-01)