Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film
Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiatio...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2012/587403 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832546024203223040 |
|---|---|
| author | M. R. Khanlary E. Salavati |
| author_facet | M. R. Khanlary E. Salavati |
| author_sort | M. R. Khanlary |
| collection | DOAJ |
| description | Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy. |
| format | Article |
| id | doaj-art-dfb2562691504b6f9911a9cd7452fec7 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-dfb2562691504b6f9911a9cd7452fec72025-02-03T07:24:07ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242012-01-01201210.1155/2012/587403587403Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin FilmM. R. Khanlary0E. Salavati1Physics Department, Imam Khomeini International University, Qazvin, IranPhysics Department, Islamic Azad University, Qom Branch, Qom, IranPhysical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.http://dx.doi.org/10.1155/2012/587403 |
| spellingShingle | M. R. Khanlary E. Salavati Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film Advances in Condensed Matter Physics |
| title | Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film |
| title_full | Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film |
| title_fullStr | Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film |
| title_full_unstemmed | Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film |
| title_short | Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film |
| title_sort | optical properties and characterization of prepared sn doped pbse thin film |
| url | http://dx.doi.org/10.1155/2012/587403 |
| work_keys_str_mv | AT mrkhanlary opticalpropertiesandcharacterizationofpreparedsndopedpbsethinfilm AT esalavati opticalpropertiesandcharacterizationofpreparedsndopedpbsethinfilm |