Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate
In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga...
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IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7389483/ |
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| author | Xiao-Long Hu Zhao-Yi Qi Hong Wang Xi-Chun Zhang |
| author_facet | Xiao-Long Hu Zhao-Yi Qi Hong Wang Xi-Chun Zhang |
| author_sort | Xiao-Long Hu |
| collection | DOAJ |
| description | In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga-polar n-GaN and superior design of n-electrode pattern, resulting in an improved electrical performance when compared with the vertical-structure (VS) TFLED, in which the n-contacts need to be formed on N-polar n-GaN. In addition, the light output power was enhanced through this architecture due to the uniform current distribution and the absence of pads and wires on top of the FC-TFLEDs. It is found that the wall-plug efficiency of the FC-TFLEDs is 23.6% higher than that of the VS-TFLEDs. Moreover, the FC-TFLEDs with a concavely patterned surface were fabricated from the LED wafer with patterned sapphire substrate. Further improvement in output power was achieved when compared with that of the FC-TFLED fabricated from the LED wafer with flat sapphire substrate. |
| format | Article |
| id | doaj-art-df9617129b0346b1b8f836b7e1d01f4e |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-df9617129b0346b1b8f836b7e1d01f4e2025-08-20T03:32:55ZengIEEEIEEE Photonics Journal1943-06552016-01-01811810.1109/JPHOT.2016.25169117389483Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic SubstrateXiao-Long Hu0Zhao-Yi Qi1Hong Wang2Xi-Chun Zhang3Eng. Res. Center for Optoelectron. of Guangdong Province, South China Univ. of Technol., Guangzhou, ChinaEng. Res. Center for Optoelectron. of Guangdong Province, South China Univ. of Technol., Guangzhou, ChinaEng. Res. Center for Optoelectron. of Guangdong Province, South China Univ. of Technol., Guangzhou, ChinaEng. Res. Center for Optoelectron. of Guangdong Province, South China Univ. of Technol., Guangzhou, ChinaIn this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga-polar n-GaN and superior design of n-electrode pattern, resulting in an improved electrical performance when compared with the vertical-structure (VS) TFLED, in which the n-contacts need to be formed on N-polar n-GaN. In addition, the light output power was enhanced through this architecture due to the uniform current distribution and the absence of pads and wires on top of the FC-TFLEDs. It is found that the wall-plug efficiency of the FC-TFLEDs is 23.6% higher than that of the VS-TFLEDs. Moreover, the FC-TFLEDs with a concavely patterned surface were fabricated from the LED wafer with patterned sapphire substrate. Further improvement in output power was achieved when compared with that of the FC-TFLED fabricated from the LED wafer with flat sapphire substrate.https://ieeexplore.ieee.org/document/7389483/InGaNflip-chipelectroplatingthin-film LEDsconcavely patterned surface |
| spellingShingle | Xiao-Long Hu Zhao-Yi Qi Hong Wang Xi-Chun Zhang Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate IEEE Photonics Journal InGaN flip-chip electroplating thin-film LEDs concavely patterned surface |
| title | Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate |
| title_full | Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate |
| title_fullStr | Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate |
| title_full_unstemmed | Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate |
| title_short | Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate |
| title_sort | performance of ingan based thin film leds with flip chip configuration and concavely patterned surface fabricated on electroplating metallic substrate |
| topic | InGaN flip-chip electroplating thin-film LEDs concavely patterned surface |
| url | https://ieeexplore.ieee.org/document/7389483/ |
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