Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition
We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor, AgCrSe2, on a lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using an Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0273060 |
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| author | Yusuke Tajima Kenshin Inamura Sebun Masaki Takumi Yamazaki Takeshi Seki Kazutaka Kudo Jobu Matsuno Junichi Shiogai |
| author_facet | Yusuke Tajima Kenshin Inamura Sebun Masaki Takumi Yamazaki Takeshi Seki Kazutaka Kudo Jobu Matsuno Junichi Shiogai |
| author_sort | Yusuke Tajima |
| collection | DOAJ |
| description | We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor, AgCrSe2, on a lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using an Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show an absorption edge at around 0.84 eV and a magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surfaces or heterointerfaces. |
| format | Article |
| id | doaj-art-df84cdd22b8c4e1e8e4b27f7d59788bb |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-df84cdd22b8c4e1e8e4b27f7d59788bb2025-08-20T02:37:33ZengAIP Publishing LLCAPL Materials2166-532X2025-06-01136061117061117-710.1063/5.0273060Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser depositionYusuke Tajima0Kenshin Inamura1Sebun Masaki2Takumi Yamazaki3Takeshi Seki4Kazutaka Kudo5Jobu Matsuno6Junichi Shiogai7Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanInstitute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, JapanInstitute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanWe report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor, AgCrSe2, on a lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using an Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show an absorption edge at around 0.84 eV and a magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surfaces or heterointerfaces.http://dx.doi.org/10.1063/5.0273060 |
| spellingShingle | Yusuke Tajima Kenshin Inamura Sebun Masaki Takumi Yamazaki Takeshi Seki Kazutaka Kudo Jobu Matsuno Junichi Shiogai Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition APL Materials |
| title | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| title_full | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| title_fullStr | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| title_full_unstemmed | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| title_short | Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition |
| title_sort | stoichiometry control and epitaxial growth of agcrse2 thin films by pulsed laser deposition |
| url | http://dx.doi.org/10.1063/5.0273060 |
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