On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature

Excitons, which are bound states of electrons and holes, in transition metal dichalcogenides (TMDCs) have been studied as an information carrier for realizing new types of optoelectronic devices. However, the charge neutrality of excitons inhibits the electric control of their motion, as seen in con...

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Main Authors: Choi Woo Hun, Lee Seong Won, Gong Su-Hyun
Format: Article
Language:English
Published: De Gruyter 2025-03-01
Series:Nanophotonics
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Online Access:https://doi.org/10.1515/nanoph-2024-0739
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author Choi Woo Hun
Lee Seong Won
Gong Su-Hyun
author_facet Choi Woo Hun
Lee Seong Won
Gong Su-Hyun
author_sort Choi Woo Hun
collection DOAJ
description Excitons, which are bound states of electrons and holes, in transition metal dichalcogenides (TMDCs) have been studied as an information carrier for realizing new types of optoelectronic devices. However, the charge neutrality of excitons inhibits the electric control of their motion, as seen in conventional electronic devices, except when utilizing a heterostructure. Here, we investigated the drift motion of trions, quasiparticles composed of an exciton bound to an excess charge, at room temperature in a suspended WS2 monolayer by applying a gate-tunable electric field. Using a simple bottom-gate device, we can tune the electric field intensity and exciton-to-trion conversion ratio by increasing the charge density in the monolayer. Consequently, we experimentally observed that locally excited trions drift toward the center of the suspended monolayer. To understand the underlying mechanisms, we numerically simulated the trion drift using the drift-diffusion equation, accounting for the contributions from both the electric field and strain. The results confirmed that the electric field plays the dominant role in the drift phenomena. Our work offers a useful platform for realizing trion-based optoelectronic devices that are capable of operating even at room temperature.
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spelling doaj-art-df7d3f8cb4f84875832044090f2f53652025-08-20T03:55:16ZengDe GruyterNanophotonics2192-86142025-03-0114101653166310.1515/nanoph-2024-0739On-chip manipulation of trion drift in suspended WS2 monolayer at room temperatureChoi Woo Hun0Lee Seong Won1Gong Su-Hyun2Department of Physics, 34973Korea University, Seoul, 02841, South KoreaDepartment of Physics, 34973Korea University, Seoul, 02841, South KoreaDepartment of Physics, 34973Korea University, Seoul, 02841, South KoreaExcitons, which are bound states of electrons and holes, in transition metal dichalcogenides (TMDCs) have been studied as an information carrier for realizing new types of optoelectronic devices. However, the charge neutrality of excitons inhibits the electric control of their motion, as seen in conventional electronic devices, except when utilizing a heterostructure. Here, we investigated the drift motion of trions, quasiparticles composed of an exciton bound to an excess charge, at room temperature in a suspended WS2 monolayer by applying a gate-tunable electric field. Using a simple bottom-gate device, we can tune the electric field intensity and exciton-to-trion conversion ratio by increasing the charge density in the monolayer. Consequently, we experimentally observed that locally excited trions drift toward the center of the suspended monolayer. To understand the underlying mechanisms, we numerically simulated the trion drift using the drift-diffusion equation, accounting for the contributions from both the electric field and strain. The results confirmed that the electric field plays the dominant role in the drift phenomena. Our work offers a useful platform for realizing trion-based optoelectronic devices that are capable of operating even at room temperature.https://doi.org/10.1515/nanoph-2024-0739trion driftoptoelectronicstransition metal dichalcogenidetungsten disulfide
spellingShingle Choi Woo Hun
Lee Seong Won
Gong Su-Hyun
On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
Nanophotonics
trion drift
optoelectronics
transition metal dichalcogenide
tungsten disulfide
title On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
title_full On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
title_fullStr On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
title_full_unstemmed On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
title_short On-chip manipulation of trion drift in suspended WS2 monolayer at room temperature
title_sort on chip manipulation of trion drift in suspended ws2 monolayer at room temperature
topic trion drift
optoelectronics
transition metal dichalcogenide
tungsten disulfide
url https://doi.org/10.1515/nanoph-2024-0739
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AT leeseongwon onchipmanipulationoftriondriftinsuspendedws2monolayeratroomtemperature
AT gongsuhyun onchipmanipulationoftriondriftinsuspendedws2monolayeratroomtemperature