Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs
ABSTRACT Compact and energy-efficient computing avenues such as in-memory computing and processing-in-memory (PIM) are being actively explored to address the limitations of the sparse vonNeumann computing systems. The recent advancements in the field of emerging non-volatile memories (e-NVMs), such...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10752562/ |
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