Homogeneous plasmonic structures on porous silicon
In this work, we report the synthesis, characterization, and properties of Ni- and Ag-based plasmonic nanoparticles (PNPs) incorporated into a porous silicon (por-Si) matrix fabricated by masking the wafer surface using optical lithography and subsequent pore formation with the deposition...
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2025-06-01
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| author | Kurbangali B. Tynyshtykbayev Khabibulla A. Abdullin Danil W. Boukhvalov Elena Dmitrieva Bekzat Zhumabay Parasat Kusherova Bagdat A. Rakymetov Alimjan S. Serikbekov Nikolay A. Chuchvaga |
| author_facet | Kurbangali B. Tynyshtykbayev Khabibulla A. Abdullin Danil W. Boukhvalov Elena Dmitrieva Bekzat Zhumabay Parasat Kusherova Bagdat A. Rakymetov Alimjan S. Serikbekov Nikolay A. Chuchvaga |
| author_sort | Kurbangali B. Tynyshtykbayev |
| collection | DOAJ |
| description |
In this work, we report the synthesis, characterization, and properties of Ni- and Ag-based plasmonic nanoparticles (PNPs) incorporated into a porous silicon (por-Si) matrix fabricated by masking the wafer surface using optical lithography and subsequent pore formation with the deposition of plasmonic-active metal nanoparticles (Me-PNPs) by single-stage metal-assisted electrochemical etching (EMACE). Preliminary masking of the silicon wafer surface using optical lithography and subsequent pore etching by the EMACE method with a simultaneous deposition of Me-PNPs allows for the fabrication of a periodic plasmonic structure, which demonstrates an enhancement of Raman signal, photoluminescence, and an improvement in water evaporation processes. Nickel-doped plasmonic structures created using photolithography and Ni+-ion implantation have high chemical stability due to the formation of nickel silicides (NiSi) in the surface layer. Silver-doped plasmonic structures on porous silicon, Ag-PNPs/por-Si, demonstrate a substantial enhancement of the Raman scattering signal at frequencies corresponding to the nanocrystalline phase, nc-Si, and high visible photoluminescence. The luminosity of silver plasmonic structures is due to the radiative properties of the Ag-PNPs/por-Si plasmonic structure, consisting of silver nanoparticles (Ag-PNPs) and porous silicon nanocrystallites (NC/por-Si). The calorific value of plasmonic structures on porous silicon Me-PNPs/por-Si depends on the time of the metal-stimulated etching of pores and the deposition of plasmonic nanoparticles (PNPs). The calorific value of the silver plasmonic structure Ag-PNPs/por-Si is higher than that of Ni-PNPs/por-Si and Ni/Ag-PNPs/por-Si. It exceeds the efficiency of known solar thermal vapor generators and is equal to Ea = 7.58 kg·m–2·h–1. The obtained results have important applied values in the technology of micro- and nanoelectronics for the fabrication of radiating devices and appliances using chemical, electrochemical etching methods; highly efficient solar thermal generators. |
| format | Article |
| id | doaj-art-de7dcf6d40764fe8a32956ee56dd2cf5 |
| institution | Kabale University |
| issn | 2997-2027 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Academia.edu Journals |
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| series | Academia Materials Science |
| spelling | doaj-art-de7dcf6d40764fe8a32956ee56dd2cf52025-08-20T03:50:48ZengAcademia.edu JournalsAcademia Materials Science2997-20272025-06-012210.20935/AcadMatSci7765Homogeneous plasmonic structures on porous siliconKurbangali B. Tynyshtykbayev0Khabibulla A. Abdullin1Danil W. Boukhvalov2Elena Dmitrieva3Bekzat Zhumabay4Parasat Kusherova5Bagdat A. Rakymetov6Alimjan S. Serikbekov7Nikolay A. Chuchvaga8Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Faculty of Physics and Technology, al-Farabi Kazakh National University, 71 al-Farabi Ave., Almaty 050040, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan.Institute of Physics and Technology, Satbayev University, Ibragimov 11, Almaty 050032, Kazakhstan. In this work, we report the synthesis, characterization, and properties of Ni- and Ag-based plasmonic nanoparticles (PNPs) incorporated into a porous silicon (por-Si) matrix fabricated by masking the wafer surface using optical lithography and subsequent pore formation with the deposition of plasmonic-active metal nanoparticles (Me-PNPs) by single-stage metal-assisted electrochemical etching (EMACE). Preliminary masking of the silicon wafer surface using optical lithography and subsequent pore etching by the EMACE method with a simultaneous deposition of Me-PNPs allows for the fabrication of a periodic plasmonic structure, which demonstrates an enhancement of Raman signal, photoluminescence, and an improvement in water evaporation processes. Nickel-doped plasmonic structures created using photolithography and Ni+-ion implantation have high chemical stability due to the formation of nickel silicides (NiSi) in the surface layer. Silver-doped plasmonic structures on porous silicon, Ag-PNPs/por-Si, demonstrate a substantial enhancement of the Raman scattering signal at frequencies corresponding to the nanocrystalline phase, nc-Si, and high visible photoluminescence. The luminosity of silver plasmonic structures is due to the radiative properties of the Ag-PNPs/por-Si plasmonic structure, consisting of silver nanoparticles (Ag-PNPs) and porous silicon nanocrystallites (NC/por-Si). The calorific value of plasmonic structures on porous silicon Me-PNPs/por-Si depends on the time of the metal-stimulated etching of pores and the deposition of plasmonic nanoparticles (PNPs). The calorific value of the silver plasmonic structure Ag-PNPs/por-Si is higher than that of Ni-PNPs/por-Si and Ni/Ag-PNPs/por-Si. It exceeds the efficiency of known solar thermal vapor generators and is equal to Ea = 7.58 kg·m–2·h–1. The obtained results have important applied values in the technology of micro- and nanoelectronics for the fabrication of radiating devices and appliances using chemical, electrochemical etching methods; highly efficient solar thermal generators.https://www.academia.edu/129931227/Homogeneous_plasmonic_structures_on_porous_silicon |
| spellingShingle | Kurbangali B. Tynyshtykbayev Khabibulla A. Abdullin Danil W. Boukhvalov Elena Dmitrieva Bekzat Zhumabay Parasat Kusherova Bagdat A. Rakymetov Alimjan S. Serikbekov Nikolay A. Chuchvaga Homogeneous plasmonic structures on porous silicon Academia Materials Science |
| title | Homogeneous plasmonic structures on porous silicon |
| title_full | Homogeneous plasmonic structures on porous silicon |
| title_fullStr | Homogeneous plasmonic structures on porous silicon |
| title_full_unstemmed | Homogeneous plasmonic structures on porous silicon |
| title_short | Homogeneous plasmonic structures on porous silicon |
| title_sort | homogeneous plasmonic structures on porous silicon |
| url | https://www.academia.edu/129931227/Homogeneous_plasmonic_structures_on_porous_silicon |
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